Effect of oxygen concentration on the chemical behavior of deuterium implanted into oxygen-containing boron thin films

Boronization is planned as one of the wall conditioning techniques for impurity reduction in fusion plasmas. Oxygen-containing boron films were prepared for simulating boronization, and exposed to energetic deuterium ions. From the XPS results, it was found that the B-1s peak energy was shifted to h...

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Bibliographic Details
Published in:Journal of nuclear materials 2007-08, Vol.367, p.1527-1530
Main Authors: Yoshikawa, Akira, Oyaidzu, Makoto, Miyauchi, Hideo, Oya, Yasuhisa, Sagara, Akio, Noda, Nobuaki, Okuno, Kenji
Format: Article
Language:English
Subjects:
Applied sciences
Controled nuclear fusion plants
Energy
Energy. Thermal use of fuels
Exact sciences and technology
Installations for energy generation and conversion: thermal and electrical energy
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Summary:Boronization is planned as one of the wall conditioning techniques for impurity reduction in fusion plasmas. Oxygen-containing boron films were prepared for simulating boronization, and exposed to energetic deuterium ions. From the XPS results, it was found that the B-1s peak energy was shifted to higher energy as the oxygen concentration increased. However, the deuterium retention decreased according to TDS. In addition, deuterium desorption was observed at a higher temperature, which is not found for a deuterium ion implanted pure boron film. These facts indicate that boron oxide was formed and deuterium was trapped by forming O–D bond when the oxygen concentration was above 37%. We conclude that the oxygen concentration should be kept less than 10% to prevent high tritium retention on the surface of the first wall in the future fusion devices.
ISSN:0022-3115
1873-4820
DOI:10.1016/j.jnucmat.2007.04.016