Current mechanism in SbSeI crystals based on phonon-assisted tunnelling emission

Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage (I –V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling fr...

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Bibliographic Details
Published in:Physica Status Solidi (b) 2007-09, Vol.244 (9), p.3260-3264
Main Authors: Audzijonis, A., Sereika, R., Lapeika, V., Žaltauskas, R.
Format: Article
Language:English
Subjects:
71.38.−k
72.80.Jc
81.10.Bk
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electron states
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
Polarons and electron-phonon interactions
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Summary:Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage (I –V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling from the local levels in the metal–crystal interface to the conduction band. Calculated values: electron–phonon interaction, depth of the trap and effective mass of the polaron enabled us to estimate the electron tunnelling probability. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200642438