Current mechanism in SbSeI crystals based on phonon-assisted tunnelling emission

Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage (I –V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling fr...

Full description

Saved in:
Bibliographic Details
Published in:Physica Status Solidi (b) 2007-09, Vol.244 (9), p.3260-3264
Main Authors: Audzijonis, A., Sereika, R., Lapeika, V., Žaltauskas, R.
Format: Article
Language:English
Subjects:
71.38.−k
72.80.Jc
81.10.Bk
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electron states
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
Polarons and electron-phonon interactions
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c3888-cbe44e0704b493913691baab0e23712052610ba6a552be2db036c908ca9271c23
cites cdi_FETCH-LOGICAL-c3888-cbe44e0704b493913691baab0e23712052610ba6a552be2db036c908ca9271c23
container_end_page 3264
container_issue 9
container_start_page 3260
container_title Physica Status Solidi (b)
container_volume 244
creator Audzijonis, A.
Sereika, R.
Lapeika, V.
Žaltauskas, R.
description Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage (I –V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling from the local levels in the metal–crystal interface to the conduction band. Calculated values: electron–phonon interaction, depth of the trap and effective mass of the polaron enabled us to estimate the electron tunnelling probability. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssb.200642438
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_30098736</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>30098736</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3888-cbe44e0704b493913691baab0e23712052610ba6a552be2db036c908ca9271c23</originalsourceid><addsrcrecordid>eNqFkMtOwzAQRS0EEuWxZZ0N7FLGj8TxEiooSBWvgujOso0LgdQpnlTQv8dVEbBjNdLonjujQ8gBhT4FYMdzRNtnAKVgglcbpEcLRnOuCrpJesAl5FRJtk12EF8BQFJOe-RmsIjRhy6befdiQo2zrA7Z2I79ZebiEjvTYGYN-qesDdn8pQ1tyA1ijV1adYsQfNPU4Tnzszpt27BHtqaJ8fvfc5c8nJ_dDy7y0fXwcnAyyh2vqip31gvhQYKwQnFFeamoNcaCZ1xSBgUrKVhTmqJg1rMnC7x0CipnFJPUMb5Ljta989i-Lzx2Oj3g0jMm-HaBmgOoSvIyBfvroIstYvRTPY_1zMSlpqBX4vRKnP4Rl4DD72aDzjTTaIKr8ZdSyaUQkHJqnfuoG7_8p1XfjMenf2_ka3bl8fOHNfFNl5LLQj9eDfVkcsduhbzVgn8BsDKOWQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>30098736</pqid></control><display><type>article</type><title>Current mechanism in SbSeI crystals based on phonon-assisted tunnelling emission</title><source>Wiley-Blackwell Read &amp; Publish Collection</source><creator>Audzijonis, A. ; Sereika, R. ; Lapeika, V. ; Žaltauskas, R.</creator><creatorcontrib>Audzijonis, A. ; Sereika, R. ; Lapeika, V. ; Žaltauskas, R.</creatorcontrib><description>Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage (I –V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling from the local levels in the metal–crystal interface to the conduction band. Calculated values: electron–phonon interaction, depth of the trap and effective mass of the polaron enabled us to estimate the electron tunnelling probability. (© 2007 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.200642438</identifier><identifier>CODEN: PSSBBD</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>71.38.−k ; 72.80.Jc ; 81.10.Bk ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity phenomena in semiconductors and insulators ; Electron states ; Electronic transport in condensed matter ; Exact sciences and technology ; Low-field transport and mobility; piezoresistance ; Physics ; Polarons and electron-phonon interactions</subject><ispartof>Physica Status Solidi (b), 2007-09, Vol.244 (9), p.3260-3264</ispartof><rights>Copyright © 2007 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3888-cbe44e0704b493913691baab0e23712052610ba6a552be2db036c908ca9271c23</citedby><cites>FETCH-LOGICAL-c3888-cbe44e0704b493913691baab0e23712052610ba6a552be2db036c908ca9271c23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=19037440$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Audzijonis, A.</creatorcontrib><creatorcontrib>Sereika, R.</creatorcontrib><creatorcontrib>Lapeika, V.</creatorcontrib><creatorcontrib>Žaltauskas, R.</creatorcontrib><title>Current mechanism in SbSeI crystals based on phonon-assisted tunnelling emission</title><title>Physica Status Solidi (b)</title><addtitle>phys. stat. sol. (b)</addtitle><description>Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage (I –V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling from the local levels in the metal–crystal interface to the conduction band. Calculated values: electron–phonon interaction, depth of the trap and effective mass of the polaron enabled us to estimate the electron tunnelling probability. (© 2007 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><subject>71.38.−k</subject><subject>72.80.Jc</subject><subject>81.10.Bk</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Electron states</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Physics</subject><subject>Polarons and electron-phonon interactions</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEuWxZZ0N7FLGj8TxEiooSBWvgujOso0LgdQpnlTQv8dVEbBjNdLonjujQ8gBhT4FYMdzRNtnAKVgglcbpEcLRnOuCrpJesAl5FRJtk12EF8BQFJOe-RmsIjRhy6befdiQo2zrA7Z2I79ZebiEjvTYGYN-qesDdn8pQ1tyA1ijV1adYsQfNPU4Tnzszpt27BHtqaJ8fvfc5c8nJ_dDy7y0fXwcnAyyh2vqip31gvhQYKwQnFFeamoNcaCZ1xSBgUrKVhTmqJg1rMnC7x0CipnFJPUMb5Ljta989i-Lzx2Oj3g0jMm-HaBmgOoSvIyBfvroIstYvRTPY_1zMSlpqBX4vRKnP4Rl4DD72aDzjTTaIKr8ZdSyaUQkHJqnfuoG7_8p1XfjMenf2_ka3bl8fOHNfFNl5LLQj9eDfVkcsduhbzVgn8BsDKOWQ</recordid><startdate>200709</startdate><enddate>200709</enddate><creator>Audzijonis, A.</creator><creator>Sereika, R.</creator><creator>Lapeika, V.</creator><creator>Žaltauskas, R.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200709</creationdate><title>Current mechanism in SbSeI crystals based on phonon-assisted tunnelling emission</title><author>Audzijonis, A. ; Sereika, R. ; Lapeika, V. ; Žaltauskas, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3888-cbe44e0704b493913691baab0e23712052610ba6a552be2db036c908ca9271c23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>71.38.−k</topic><topic>72.80.Jc</topic><topic>81.10.Bk</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Electron states</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Physics</topic><topic>Polarons and electron-phonon interactions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Audzijonis, A.</creatorcontrib><creatorcontrib>Sereika, R.</creatorcontrib><creatorcontrib>Lapeika, V.</creatorcontrib><creatorcontrib>Žaltauskas, R.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica Status Solidi (b)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Audzijonis, A.</au><au>Sereika, R.</au><au>Lapeika, V.</au><au>Žaltauskas, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Current mechanism in SbSeI crystals based on phonon-assisted tunnelling emission</atitle><jtitle>Physica Status Solidi (b)</jtitle><addtitle>phys. stat. sol. (b)</addtitle><date>2007-09</date><risdate>2007</risdate><volume>244</volume><issue>9</issue><spage>3260</spage><epage>3264</epage><pages>3260-3264</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><coden>PSSBBD</coden><abstract>Single crystals of SbSeI were grown by the vapour phase technique. Reverse current–voltage (I –V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon‐assisted electron tunnelling from the local levels in the metal–crystal interface to the conduction band. Calculated values: electron–phonon interaction, depth of the trap and effective mass of the polaron enabled us to estimate the electron tunnelling probability. (© 2007 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssb.200642438</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0370-1972
ispartof Physica Status Solidi (b), 2007-09, Vol.244 (9), p.3260-3264
issn 0370-1972
1521-3951
language eng
recordid cdi_proquest_miscellaneous_30098736
source Wiley-Blackwell Read & Publish Collection
subjects 71.38.−k
72.80.Jc
81.10.Bk
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electron states
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
Polarons and electron-phonon interactions
title Current mechanism in SbSeI crystals based on phonon-assisted tunnelling emission
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T03%3A38%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Current%20mechanism%20in%20SbSeI%20crystals%20based%20on%20phonon-assisted%20tunnelling%20emission&rft.jtitle=Physica%20Status%20Solidi%20(b)&rft.au=Audzijonis,%20A.&rft.date=2007-09&rft.volume=244&rft.issue=9&rft.spage=3260&rft.epage=3264&rft.pages=3260-3264&rft.issn=0370-1972&rft.eissn=1521-3951&rft.coden=PSSBBD&rft_id=info:doi/10.1002/pssb.200642438&rft_dat=%3Cproquest_cross%3E30098736%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3888-cbe44e0704b493913691baab0e23712052610ba6a552be2db036c908ca9271c23%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=30098736&rft_id=info:pmid/&rfr_iscdi=true