Atomic layer deposition of lanthana thin films using high-purity lanthanum amino precursors

Lanthana (La 2O 3) thin films were grown by atomic layer deposition using the homoleptic amino precursor La[N(TMS) 2] 3. This volatile metal-organic was synthesized on a large scale using commercially available lanthanum triflate (La(OTf) 3) and the amino was recovered in excellent yields and high a...

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Bibliographic Details
Published in:Materials chemistry and physics 2007-08, Vol.104 (2), p.220-224
Main Authors: Inman, Ronald, Schuetz, Steven A., Silvernail, Carter M., Balaz, Snjezana, Dowben, Peter A., Jursich, Gregory, McAndrew, James, Belot, John A.
Format: Article
Language:English
Subjects:
Ceramics
Chemical synthesis
Oxides
Thins films
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Summary:Lanthana (La 2O 3) thin films were grown by atomic layer deposition using the homoleptic amino precursor La[N(TMS) 2] 3. This volatile metal-organic was synthesized on a large scale using commercially available lanthanum triflate (La(OTf) 3) and the amino was recovered in excellent yields and high analytical purity. La 2O 3 thin films (∼25 nm) were grown on p-type (1 0 0) silicon substrates using a hot-wall ALD reactor at 300 °C and exhibit smooth, featureless surfaces with rms roughnesses of 2.5 nm. PXRD indicates that the existing lanthana crystallites can be indexed in the hexagonal system.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2007.03.002