High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential

Three simple, controlled steps are all it takes to synthesize the title pentacene analogue DBTDT (see figure). The material's high ionization potential, high thermal and photostability, high mobilities, and an on/off ratio larger than 106 at a substrate temperature of ca. 36 °C, as reported her...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-10, Vol.19 (19), p.3008-3011
Main Authors: Gao, J. H., Li, R. J., Li, L. Q., Meng, Q., Jiang, H., Li, H. X., Hu, W. P.
Format: Article
Language:English
Subjects:
Field-effect transistors
Pentacene analogues
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Summary:Three simple, controlled steps are all it takes to synthesize the title pentacene analogue DBTDT (see figure). The material's high ionization potential, high thermal and photostability, high mobilities, and an on/off ratio larger than 106 at a substrate temperature of ca. 36 °C, as reported here, suggest that DBTDT will be extremely valuable for applications in plastic organic electronics.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200701167