General wet route for the growth of regular anisotropic nanostructures on silicon substrate

• Published in: Journal of crystal growth 2007-08, Vol.306 (1), p.225-232
• Main Authors: Cao, Xuebo, Lan, Xianmei, Zhao, Cui, Shen, Wenjun, Yao, Dan, Gao, Weijian
• Format: Article
• Language: English
• Subjects: A1. Crystal morphology; A1. Nanostructures; B1. Oxides; B1. Sulfides; B2. Semiconducting materials; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; General studies of phase transitions; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanoscale materials and structures: fabrication and characterization; Nucleation; Other topics in nanoscale materials and structures; Physics; Solid-solid transitions; Specific phase transitions; Theory and models of film growth
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.05.001

We proposed a general and highly efficient wet strategy for the fabrication of ordered anisotropic nanostructures on the solid substrate. The method involves the pre-deposition of colloidal precursors onto the surface of the silicon substrate and the subsequent hydrothermal crystallization. In the process of crystallization, the colloidal precursors can develop into distinct shapes. The use of the substrate can promote the nucleation and the occurrence of anisotropic growth and induces the products to grow into ordered structures. With this method, regular ZnO nanoellipsoids, SnO 2 and Cd(OH) 2 nanorod clusters, and Bi 2S 3 nanowires were prepared readily. The growth processes of the four regular nanostructures were studied through the investigations of the morphology of precursors and intermediates.