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Chemical and structural characterization of barium hexaferrite films deposited on 6H-SiC with and without MgO/BaM interwoven layers

High quality epitaxial barium hexaferrite (BaM) films with saturation magnetization of 4.3 kG, coercivity of 389 Oe, and FMR linewidth of 500 Oe, have been deposited by pulsed laser deposition on 6H-silicon carbide (SiC) single crystal substrates using an interwoven layer of magnesium oxide (MgO) an...

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Published in:Journal of crystal growth 2007-09, Vol.307 (2), p.321-327
Main Authors: Cai, Zhuhua, Chen, Zhaohui, Goodrich, Trevor L., Harris, V.G., Ziemer, Katherine S.
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cited_by cdi_FETCH-LOGICAL-c373t-5718c254dc6cb956c246d2f5e11a2ad06807408f1555bbc7ee6bcb3067cd1ade3
cites cdi_FETCH-LOGICAL-c373t-5718c254dc6cb956c246d2f5e11a2ad06807408f1555bbc7ee6bcb3067cd1ade3
container_end_page 327
container_issue 2
container_start_page 321
container_title Journal of crystal growth
container_volume 307
creator Cai, Zhuhua
Chen, Zhaohui
Goodrich, Trevor L.
Harris, V.G.
Ziemer, Katherine S.
description High quality epitaxial barium hexaferrite (BaM) films with saturation magnetization of 4.3 kG, coercivity of 389 Oe, and FMR linewidth of 500 Oe, have been deposited by pulsed laser deposition on 6H-silicon carbide (SiC) single crystal substrates using an interwoven layer of magnesium oxide (MgO) and BaM of approximately 16 nm thick. This paper presents a chemical and structural study of the intermediate stages of BaM film growth on the interwoven layers compared to intermediate stages of BaM film growth directly on a SiC substrate. The purpose of these experiments is to understand the role of the interwoven layers and thus further improve the magnetic properties of BaM integrated with SiC substrates. X-ray photoelectron spectroscopy surface analysis and depth profiling shows that the interwoven layers effectively eliminate silicon diffusion into the bulk BaM film, and prevent the Fe diffusion which reduces Fe/Ba ratios in films deposited without the interwoven layers. By comparing the initial stages of film growth on the MgO/BaM interwoven layers with film deposited with the same number of BaM shots on a bare SiC substrate, scanning electron microscopy and atomic force microscopy results suggest that the MgO/BaM interwoven layers promote two-dimensional growth and improve the crystallographic texture of the BaM films, likely through relief of the lattice mismatch.
doi_str_mv 10.1016/j.jcrysgro.2007.06.031
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_30114854</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024807006124</els_id><sourcerecordid>30114854</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-5718c254dc6cb956c246d2f5e11a2ad06807408f1555bbc7ee6bcb3067cd1ade3</originalsourceid><addsrcrecordid>eNqFkMFu1DAQhi0EEkvhFZAvcEs6TmInvQGrliK16gE4W8540vUqiRfbabu99sXxskUcudge6fv_kT_G3gsoBQh1ui23GPbxNviyAmhLUCXU4gVbia6tCwlQvWSrfFYFVE33mr2JcQuQkwJW7Gm9ocmhGbmZLY8pLJiWkEfcmGAwUXCPJjk_cz_w3gS3THxDD2agEFwiPrhxitzSzsc8Wp5BdVl8d2t-79LmT-nh4ZfEr29vTr-Ya-7m3Hrv72jmo9lTiG_Zq8GMkd493yfs58X5j_VlcXXz9dv681WBdVunQraiw0o2FhX2Z1Jh1ShbDZKEMJWxoDpoG-gGIaXse2yJVI99DapFK4yl-oR9PPbugv-1UEx6chFpHM1Mfom6BiGaTjYZVEcQg48x0KB3wU0m7LUAfXCut_qvc31wrkHp7DwHPzxvMDE7HYKZ0cV_6TNolZBd5j4dOcrfvXMUdERHM5J1gTBp693_Vv0G0nqd5g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>30114854</pqid></control><display><type>article</type><title>Chemical and structural characterization of barium hexaferrite films deposited on 6H-SiC with and without MgO/BaM interwoven layers</title><source>Elsevier</source><creator>Cai, Zhuhua ; Chen, Zhaohui ; Goodrich, Trevor L. ; Harris, V.G. ; Ziemer, Katherine S.</creator><creatorcontrib>Cai, Zhuhua ; Chen, Zhaohui ; Goodrich, Trevor L. ; Harris, V.G. ; Ziemer, Katherine S.</creatorcontrib><description>High quality epitaxial barium hexaferrite (BaM) films with saturation magnetization of 4.3 kG, coercivity of 389 Oe, and FMR linewidth of 500 Oe, have been deposited by pulsed laser deposition on 6H-silicon carbide (SiC) single crystal substrates using an interwoven layer of magnesium oxide (MgO) and BaM of approximately 16 nm thick. This paper presents a chemical and structural study of the intermediate stages of BaM film growth on the interwoven layers compared to intermediate stages of BaM film growth directly on a SiC substrate. The purpose of these experiments is to understand the role of the interwoven layers and thus further improve the magnetic properties of BaM integrated with SiC substrates. X-ray photoelectron spectroscopy surface analysis and depth profiling shows that the interwoven layers effectively eliminate silicon diffusion into the bulk BaM film, and prevent the Fe diffusion which reduces Fe/Ba ratios in films deposited without the interwoven layers. By comparing the initial stages of film growth on the MgO/BaM interwoven layers with film deposited with the same number of BaM shots on a bare SiC substrate, scanning electron microscopy and atomic force microscopy results suggest that the MgO/BaM interwoven layers promote two-dimensional growth and improve the crystallographic texture of the BaM films, likely through relief of the lattice mismatch.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2007.06.031</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Si diffusion ; A1. XPS depth profile ; A3. PLD ; B1. Barium ferrite ; B1. Magnesium oxide ; B2. Silicon carbide ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Laser deposition ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Theory and models of film growth ; Thin film structure and morphology</subject><ispartof>Journal of crystal growth, 2007-09, Vol.307 (2), p.321-327</ispartof><rights>2007 Elsevier B.V.</rights><rights>2007 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-5718c254dc6cb956c246d2f5e11a2ad06807408f1555bbc7ee6bcb3067cd1ade3</citedby><cites>FETCH-LOGICAL-c373t-5718c254dc6cb956c246d2f5e11a2ad06807408f1555bbc7ee6bcb3067cd1ade3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=19076158$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Cai, Zhuhua</creatorcontrib><creatorcontrib>Chen, Zhaohui</creatorcontrib><creatorcontrib>Goodrich, Trevor L.</creatorcontrib><creatorcontrib>Harris, V.G.</creatorcontrib><creatorcontrib>Ziemer, Katherine S.</creatorcontrib><title>Chemical and structural characterization of barium hexaferrite films deposited on 6H-SiC with and without MgO/BaM interwoven layers</title><title>Journal of crystal growth</title><description>High quality epitaxial barium hexaferrite (BaM) films with saturation magnetization of 4.3 kG, coercivity of 389 Oe, and FMR linewidth of 500 Oe, have been deposited by pulsed laser deposition on 6H-silicon carbide (SiC) single crystal substrates using an interwoven layer of magnesium oxide (MgO) and BaM of approximately 16 nm thick. This paper presents a chemical and structural study of the intermediate stages of BaM film growth on the interwoven layers compared to intermediate stages of BaM film growth directly on a SiC substrate. The purpose of these experiments is to understand the role of the interwoven layers and thus further improve the magnetic properties of BaM integrated with SiC substrates. X-ray photoelectron spectroscopy surface analysis and depth profiling shows that the interwoven layers effectively eliminate silicon diffusion into the bulk BaM film, and prevent the Fe diffusion which reduces Fe/Ba ratios in films deposited without the interwoven layers. By comparing the initial stages of film growth on the MgO/BaM interwoven layers with film deposited with the same number of BaM shots on a bare SiC substrate, scanning electron microscopy and atomic force microscopy results suggest that the MgO/BaM interwoven layers promote two-dimensional growth and improve the crystallographic texture of the BaM films, likely through relief of the lattice mismatch.</description><subject>A1. Si diffusion</subject><subject>A1. XPS depth profile</subject><subject>A3. PLD</subject><subject>B1. Barium ferrite</subject><subject>B1. Magnesium oxide</subject><subject>B2. Silicon carbide</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Laser deposition</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Theory and models of film growth</subject><subject>Thin film structure and morphology</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkMFu1DAQhi0EEkvhFZAvcEs6TmInvQGrliK16gE4W8540vUqiRfbabu99sXxskUcudge6fv_kT_G3gsoBQh1ui23GPbxNviyAmhLUCXU4gVbia6tCwlQvWSrfFYFVE33mr2JcQuQkwJW7Gm9ocmhGbmZLY8pLJiWkEfcmGAwUXCPJjk_cz_w3gS3THxDD2agEFwiPrhxitzSzsc8Wp5BdVl8d2t-79LmT-nh4ZfEr29vTr-Ya-7m3Hrv72jmo9lTiG_Zq8GMkd493yfs58X5j_VlcXXz9dv681WBdVunQraiw0o2FhX2Z1Jh1ShbDZKEMJWxoDpoG-gGIaXse2yJVI99DapFK4yl-oR9PPbugv-1UEx6chFpHM1Mfom6BiGaTjYZVEcQg48x0KB3wU0m7LUAfXCut_qvc31wrkHp7DwHPzxvMDE7HYKZ0cV_6TNolZBd5j4dOcrfvXMUdERHM5J1gTBp693_Vv0G0nqd5g</recordid><startdate>20070915</startdate><enddate>20070915</enddate><creator>Cai, Zhuhua</creator><creator>Chen, Zhaohui</creator><creator>Goodrich, Trevor L.</creator><creator>Harris, V.G.</creator><creator>Ziemer, Katherine S.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20070915</creationdate><title>Chemical and structural characterization of barium hexaferrite films deposited on 6H-SiC with and without MgO/BaM interwoven layers</title><author>Cai, Zhuhua ; Chen, Zhaohui ; Goodrich, Trevor L. ; Harris, V.G. ; Ziemer, Katherine S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-5718c254dc6cb956c246d2f5e11a2ad06807408f1555bbc7ee6bcb3067cd1ade3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>A1. Si diffusion</topic><topic>A1. XPS depth profile</topic><topic>A3. PLD</topic><topic>B1. Barium ferrite</topic><topic>B1. Magnesium oxide</topic><topic>B2. Silicon carbide</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Laser deposition</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>Theory and models of film growth</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cai, Zhuhua</creatorcontrib><creatorcontrib>Chen, Zhaohui</creatorcontrib><creatorcontrib>Goodrich, Trevor L.</creatorcontrib><creatorcontrib>Harris, V.G.</creatorcontrib><creatorcontrib>Ziemer, Katherine S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cai, Zhuhua</au><au>Chen, Zhaohui</au><au>Goodrich, Trevor L.</au><au>Harris, V.G.</au><au>Ziemer, Katherine S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical and structural characterization of barium hexaferrite films deposited on 6H-SiC with and without MgO/BaM interwoven layers</atitle><jtitle>Journal of crystal growth</jtitle><date>2007-09-15</date><risdate>2007</risdate><volume>307</volume><issue>2</issue><spage>321</spage><epage>327</epage><pages>321-327</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>High quality epitaxial barium hexaferrite (BaM) films with saturation magnetization of 4.3 kG, coercivity of 389 Oe, and FMR linewidth of 500 Oe, have been deposited by pulsed laser deposition on 6H-silicon carbide (SiC) single crystal substrates using an interwoven layer of magnesium oxide (MgO) and BaM of approximately 16 nm thick. This paper presents a chemical and structural study of the intermediate stages of BaM film growth on the interwoven layers compared to intermediate stages of BaM film growth directly on a SiC substrate. The purpose of these experiments is to understand the role of the interwoven layers and thus further improve the magnetic properties of BaM integrated with SiC substrates. X-ray photoelectron spectroscopy surface analysis and depth profiling shows that the interwoven layers effectively eliminate silicon diffusion into the bulk BaM film, and prevent the Fe diffusion which reduces Fe/Ba ratios in films deposited without the interwoven layers. By comparing the initial stages of film growth on the MgO/BaM interwoven layers with film deposited with the same number of BaM shots on a bare SiC substrate, scanning electron microscopy and atomic force microscopy results suggest that the MgO/BaM interwoven layers promote two-dimensional growth and improve the crystallographic texture of the BaM films, likely through relief of the lattice mismatch.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2007.06.031</doi><tpages>7</tpages></addata></record>
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1873-5002
language eng
recordid cdi_proquest_miscellaneous_30114854
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subjects A1. Si diffusion
A1. XPS depth profile
A3. PLD
B1. Barium ferrite
B1. Magnesium oxide
B2. Silicon carbide
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Laser deposition
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
Theory and models of film growth
Thin film structure and morphology
title Chemical and structural characterization of barium hexaferrite films deposited on 6H-SiC with and without MgO/BaM interwoven layers
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T08%3A26%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Chemical%20and%20structural%20characterization%20of%20barium%20hexaferrite%20films%20deposited%20on%206H-SiC%20with%20and%20without%20MgO/BaM%20interwoven%20layers&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Cai,%20Zhuhua&rft.date=2007-09-15&rft.volume=307&rft.issue=2&rft.spage=321&rft.epage=327&rft.pages=321-327&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2007.06.031&rft_dat=%3Cproquest_cross%3E30114854%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c373t-5718c254dc6cb956c246d2f5e11a2ad06807408f1555bbc7ee6bcb3067cd1ade3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=30114854&rft_id=info:pmid/&rfr_iscdi=true