Initial stages of EuBa2Cu3O7 thin film deposited on a ZnO semiconductor

ZnO thin films were deposited on R-Al2O3 substrates by reactive RF magnetron sputtering in an Ar+O2 mixture using a Zn metal target at a substrate temperature of 300°C. ZnO thin films deposited on R-Al2O3 substrates showed (110) orientation. C-axis-oriented EuBCO thin films were grown by DC magnetro...

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Bibliographic Details
Published in:Physica. C, Superconductivity Superconductivity, 2007-10, Vol.463-465, p.918-921
Main Authors: Ota, Y., Kimura, Y., Michikami, O.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
EuBa2Cu3O7
Exact sciences and technology
High-tc films
In-plane orientation
Physics
Superconducting films and low-dimensional structures
Superconductivity
Superconductor–semiconductor technology
ZnO
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Summary:ZnO thin films were deposited on R-Al2O3 substrates by reactive RF magnetron sputtering in an Ar+O2 mixture using a Zn metal target at a substrate temperature of 300°C. ZnO thin films deposited on R-Al2O3 substrates showed (110) orientation. C-axis-oriented EuBCO thin films were grown by DC magnetron sputtering directly on the ZnO thin film. The EuBCO thin films exhibited low critical temperatures (Tce). SrTiO3 insulating layers were deposited on the ZnO (110) thin films. The SrTiO3 insulating layers showed only (100) orientation. The c-axis-oriented EuBCO thin films deposited on the SrTiO3 layer exhibited Tce of 81.8K and superconducting characteristics were drastically improved.
ISSN:0921-4534
1873-2143
DOI:10.1016/j.physc.2007.02.039