Arsenic-related recombination in MOVPE-grown ZnO/GaAs films

In this paper, ZnO films grown by metalorganic vapour phase epitaxy on various substrates (GaAs, silicon, sapphire) and using different VI /II ratios, are investigated by photoluminescence (PL) spectroscopy. The PL spectra of layers grown on GaAs show significant recombination at 3.320 eV, 3.305 eV...

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Bibliographic Details
Published in:Superlattices and microstructures 2007-07, Vol.42 (1), p.26-32
Main Authors: Botha, J.R., Roro, K.T., Weichsel, C., Leitch, A.W.R., Weber, J.
Format: Article
Language:English
Subjects:
Acceptors
GaAs substrate
MOVPE
ZnO
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Summary:In this paper, ZnO films grown by metalorganic vapour phase epitaxy on various substrates (GaAs, silicon, sapphire) and using different VI /II ratios, are investigated by photoluminescence (PL) spectroscopy. The PL spectra of layers grown on GaAs show significant recombination at 3.320 eV, 3.305 eV and ∼3.270 eV. These energies are remarkably similar to what have been reported for hybrid beam deposited ZnO:As [Y.R. Ryu, T.S. Lee, H.W. White, Appl. Phys. Lett. 83 (2003) 87] and arsenic-implanted ZnO crystals [T.S. Jeong, M.S. Han, C.J. Youn, Y.S. Park, J. Appl. Phys. 96 (2004) 175], and the lines are ascribed to the incorporation of arsenic, which diffuses from the substrate into the films. Two acceptor levels are deduced at ∼120 meV and at ∼140–150 meV.
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2007.06.002