Structural and optical characterization of indium and gallium indium sulfide films prepared by modulated flux deposition

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2007-10, Vol.204 (10), p.3367-3372
• Main Authors: Sanz, C., Guillén, C., Gutiérrez, M. T.
• Format: Article
• Language: English
• Subjects: 68.55.Jk; 68.55.Nq; 78.40.Fy; 78.66.Li; 81.15.Ef; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other semiconductors; Physics; Vapor phase epitaxy; growth from vapor phase
• ISSN: 1862-6300; 0031-8965; 1862-6319
• DOI: 10.1002/pssa.200723178

Indium and gallium indium sulfide thin films were deposited on soda‐lime glass substrates at 350 °C, in a wide range of sulfur delivery conditions, by Modulated Flux Deposition (MFD). Indium sulfide films were highly crystalline β‐In2S3 (tetragonal) with Eg = 2.68 eV. Depending on the availability of sulfur, gallium indium‐poor sulfide films consisted on metal‐rich hexagonal β‐GaS layers or stoichiometric amorphous films with Eg = 3.0–3.3 eV. Finally, gallium indium‐rich sulfide films formed a mixture of β‐In2S3 and β‐GaS that became near amorphous as more sulfur was supplied; a bandgap energy of Eg = 2.44 eV was found. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)