Systematic transport properties and their doping dependences for Bi2Sr2CaCu2O8+δ single crystals in a wide doping range

• Published in: Physica. C, Superconductivity Superconductivity, 2007-09, Vol.460-462 (2), p.815-816
• Main Authors: YAMADA, Yoshiharu, WATANABE, Takao, SUZUKI, Minoru
• Format: Article
• Language: English
• Subjects: Bi-based cuprates; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cuprates superconductors (high tc and insulating parent compounds); Exact sciences and technology; Physics; Properties of type I and type II superconductors; Superconductivity; Transport properties (electric and thermal conductivity, thermoelectric effects, etc.)
• ISSN: 0921-4534; 1873-2143
• DOI: 10.1016/j.physc.2007.04.082

We have investigated the temperature dependence of the in-plane resistivity and the Hall coefficient for high-quality single crystal Bi2Sr2CaCu2O8+delta (Bi2212) in a wide doping range. Doping is controlled by successive annealing treatments from a nearly optimally doped region to an insulating region systematically. It is found that the residual resistivity increases notably with decreasing doping and undergoes the superconductor-insulator (SI) transition when the residual resistivity becomes 1mOmegacm, which corresponds to the universal sheet resistance h/4e2. In addition, the Hall coefficient at which superconductivity disappears is found to be very small compared with the La- or Y-based system. These results imply that the transition temperature is anomalously suppressed in the underdoped region of Bi2212 while the SI transition is of the same origin for various systems.