Determination of image placement accuracy due to EUV mask fabrication procedures

Extreme ultraviolet (EUV) is one of the potential candidates for next-generation lithography (NGL) in the sub-70 nm regime. The accelerated ITRS Roadmap proposes overlay error budgets of 18 and 13 nm for the 45- and 32-nm nodes, respectively, where EUV is planned to operate. As with all NGL technolo...

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Bibliographic Details
Published in:Microelectronic engineering 2002-07, Vol.61, p.251-255, Article 251
Main Authors: Mikkelson, A.R., Engelstad, R.L., Lovell, E.G.
Format: Article
Language:English
Subjects:
Applied sciences
Distortions
Electronics
Exact sciences and technology
Extreme ultraviolet (EUV)
Finite element modeling
Mask chucking
Mask fabrication
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Extreme ultraviolet (EUV) is one of the potential candidates for next-generation lithography (NGL) in the sub-70 nm regime. The accelerated ITRS Roadmap proposes overlay error budgets of 18 and 13 nm for the 45- and 32-nm nodes, respectively, where EUV is planned to operate. As with all NGL technologies, image placement accuracy during mask fabrication and usage will be a critical issue. Finite element results are reported in this paper on the characterization of pattern placement errors induced by the fabrication processes, in conjunction with mounting in the e-beam and exposure tools.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00536-1