Advanced Hi-Fill ® for interconnect liner applications

Ti/TiN liner and barrier deposition for low contact resistance tungsten plug interconnect metallisation schemes represent a major challenge for current and future aspect ratios of interconnect vias. For Ti, bottom coverage is important to minimise contact and via resistance and for TiN, good sidewal...

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Bibliographic Details
Published in:Microelectronic engineering 2002-10, Vol.64 (1), p.99-105
Main Authors: Urbansky, N, Burgess, S.R, Schmidbauer, S, Heydenreich, U, Donohue, H, Moncrieff, I, Görgens, C
Format: Article
Language:English
Subjects:
Applied sciences
Deposition process
Diffusion barrier
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Interconnect liner
Ti/TiN
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Summary:Ti/TiN liner and barrier deposition for low contact resistance tungsten plug interconnect metallisation schemes represent a major challenge for current and future aspect ratios of interconnect vias. For Ti, bottom coverage is important to minimise contact and via resistance and for TiN, good sidewall coverage is required to maintain the integrity of the W fill process. This paper describes the fundamental operation and characterisation of a novel ionised dual metal/metal nitride deposition chamber—Advanced Hi-Fill ®. Discussed is the incorporation of Advanced Hi-Fill ® technology into a BEOL production environment. Production data for via level interconnects manufactured in a 0.17-μm logic product as well as contact level for a 0.14-μm DRAM product is presented.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00787-6