Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure

In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on-off switching behavior in the front channel of our oxide-oxide heterostructure. Similarly, for an additional...

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Bibliographic Details
Published in:Materials 2024-01, Vol.17 (3), p.677
Main Authors: Kim, Yu Bin, Jeong, Jun Hyung, Park, Min Ho, Yun, Jung Min, Ma, Jin Hyun, Ha, Hyoun Ji, Kang, Seong Jae, Kang, Seong Jun
Format: Article
Language:English
Subjects:
Current carriers
Electric properties
Electrical properties
Electrons
Heterostructures
Indium gallium zinc oxide
Light
Nitrates
Optoelectronics
Photosensitivity
Phototransistors
Power consumption
Semiconductors
Sensors
Transistors
Zinc oxides
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Summary:In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on-off switching behavior in the front channel of our oxide-oxide heterostructure. Similarly, for an additional oxide layer, we have selected IZO due to its outstanding electrical properties. The optimized optoelectronic characteristics of the IGZO/IZO phototransistors were identified by adjusting the ratio of In:Zn in the IZO layer. As a result, the most remarkable traits were observed at the ratio of In:Zn = 8:2. Compared to the IGZO single-layer phototransistor, the IGZO/IZO(8:2) phototransistor showed improved photoresponse characteristics, with photosensitivity and photoresponsivity values of 1.00 × 10 and 89.1 AW , respectively, under visible light wavelength illumination. Moreover, the electrical characteristics of the IGZO/IZO(8:2) transistor, such as field effect mobility ( ) and current on/off ratio ( / ), were highly enhanced compared to the IGZO transistor. The and / were increased by about 2.1 times and 2.3 times, respectively, compared to the IGZO transistor. This work provides an approach for fabricating visible-light phototransistors with elevated optoelectronic properties and low power consumption based on an oxide-oxide heterostructure. The phototransistor with improved performance can be applied to applications such as color-selective visible-light image sensors and biometric sensors interacting with human-machine interfaces.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma17030677