A Broadband Photodetector Based on Non-Layered MnS/WSe2 Type-I Heterojunctions with Ultrahigh Photoresponsivity and Fast Photoresponse

• Published in: Materials 2024-04, Vol.17 (7), p.1590
• Main Authors: Xie, Chaojie, Yang, Yibin, Li, Kunle, Cao, Xuanhao, Chen, Shanshan, Zhao, Yu
• Format: Article
• Language: English
• Subjects: Broadband; Chemical vapor deposition; Design; Electric fields; First principles; Heterojunction devices; High temperature; Photometers; Photovoltaic effect; Separation
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma17071590

The separation of photogenerated electron–hole pairs is crucial for the construction of high-performance and wide-band responsive photodetectors. The type-I heterojunction as a photodetector is seldomly studied due to its limited separation of the carriers and narrow optical response. In this work, we demonstrated that the high performance of type-I heterojunction as a broadband photodetector can be obtained by rational design of the band alignment and proper modulation from external electric field. The heterojunction device is fabricated by vertical stacking of non-layered MnS and WSe2 flakes. Its type-I band structure is confirmed by the first-principles calculations. The MnS/WSe2 heterojunction presents a wide optical detecting range spanning from 365 nm to 1550 nm. It exhibits the characteristics of bidirectional transportation, a current on/off ratio over 103, and an excellent photoresponsivity of 108 A W−1 in the visible range. Furthermore, the response time of the device is 19 ms (rise time) and 10 ms (fall time), which is much faster than that of its constituents MnS and WSe2. The facilitation of carrier accumulation caused by the interfacial band bending is thought to be critical to the photoresponse performance of the heterojunction. In addition, the device can operate in self-powered mode, indicating a photovoltaic effect.