Large and tunable optoelectronic chromatic dispersion in PIN-type photodiodes

It is known that PN-type photodiodes possess high optoelectronic chromatic dispersion (OED). Here we present a theoretical and experimental study of OED in PIN-type photodiodes. Applying the modulation phase-shift technique, a Ge PIN photodiode exhibits ∼0.5 deg/nm phase-shift sensitivity at 10 MHz...

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Bibliographic Details
Published in:Optics letters 2024-04, Vol.49 (8), p.2057-2060
Main Authors: Dutta, Ayuushi, Liokumovitch, Egor, Glaser, Ziv, Sternklar, Shmuel
Format: Article
Language:English
Subjects:
Modulation
Optical materials
Optoelectronics
P-i-n photodiodes
Phase shift
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Summary:It is known that PN-type photodiodes possess high optoelectronic chromatic dispersion (OED). Here we present a theoretical and experimental study of OED in PIN-type photodiodes. Applying the modulation phase-shift technique, a Ge PIN photodiode exhibits ∼0.5 deg/nm phase-shift sensitivity at 10 MHz modulation, corresponding to a dispersion of 1.4 ×10 ps/( × ), many orders of magnitude larger than high-dispersion optical materials such as chalcogenide glass. A striking feature of the PIN device is the ability to tune the amount and sign of the OED through the bias voltage. Electronic tuning between -0.8 deg/nm and +0.5 deg/nm is shown. The PIN photodiode is an on-chip device possessing significant tunable dispersion for applications in optical sensing and spectroscopy.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.519164