Multilevel resistive switching in hydrothermally synthesized FeWO4 thin film-based memristive device for non-volatile memory application

• Published in: Journal of colloid and interface science 2024-09, Vol.669, p.444-457
• Main Authors: Patil, Amitkumar R., Dongale, Tukaram D., Pedanekar, Rupesh S., Sutar, Santosh S., Kamat, Rajanish K., Rajpure, Keshav Y.
• Format: Article
• Language: English
• Subjects: FeWO4; Hydrothermal; Non-volatile memory; Resistive switching; Rietveld refinement
• ISSN: 0021-9797; 1095-7103
• DOI: 10.1016/j.jcis.2024.04.222

[Display omitted] •The Ag/FWO/FTO memristive devices exhibit analogue-type bipolar resistive switching behavior.•The optimized device shows reliable non-volatile memory characteristics.•Statistical analysis reveals the better operational uniformity of the memristive devices.•The stable negative differential resistance (NDR) effect was observed in the devices.•Switching currents were modeled using Holt’s Winter Exponential Smoothing technique. The memristors offer significant advantages as a key element in non-volatile and brain-inspired neuromorphic systems because of their salient features such as remarkable endurance, ability to store multiple bits, fast operation speed, and extremely low energy usage. This work reports the resistive switching (RS) characteristics of the hydrothermally synthesized iron tungstate (FeWO4) based thin film memristive device. The detailed physicochemical analysis was investigated using Rietveld’s refinement, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM) techniques. The fabricated Ag/FWO/FTO memristive device exhibits bipolar resistive switching (BRS) behavior. In addition, the devices exhibit negative differential resistance (NDR) at both positive and negative bias. The charge-flux relation portrayed the non-ideal or memristive nature of the devices. The reliability in the RS process was analyzed in detail using Weibull distribution and time series analysis techniques. The device exhibits stable and multilevel endurance and retention characteristics which demonstrates the suitability of the device for the high-density non-volatile memory application. The current conduction of the device was dominated by Ohmic and trap controlled-space charge limited current (TC-SCLC) mechanisms and filamentary RS process responsible for the BRS in the device. In a nutshell, the present investigations reveal the potential use of the iron tungstate for the fabrication of memristive devices for the non-volatile memory application.