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Fixed‐Point Atomic Regulation Engineered Low‐Thickness Wideband Microwave Absorption

Atomic doping is widely employed to fine‐tune crystal structures, energy band structures, and the corresponding electrical properties. However, due to the difficulty in precisely regulating doping sites and concentrations, establishing a relationship between electricity properties and doping becomes...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-09, Vol.20 (37), p.e2401878-n/a
Main Authors: Qian, Yuetong, Wu, Zhengchen, Lv, Xiaowei, Huang, Mengqiu, Rao, Longjun, Wang, Lei, Lai, Yuxiang, Zhang, Jincang, Che, Renchao
Format: Article
Language:English
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Summary:Atomic doping is widely employed to fine‐tune crystal structures, energy band structures, and the corresponding electrical properties. However, due to the difficulty in precisely regulating doping sites and concentrations, establishing a relationship between electricity properties and doping becomes a huge challenge. In this work, a modulation strategy on A‐site cation dopant into spinel‐phase metal sulfide Co9S8 lattice via Fe and Ni elements is developed to improve the microwave absorption (MA) properties. At the atomic scale, accurately controlling doped sites can introduce local lattice distortions and strain concentration. Tunned electron energy redistribution of the doped Co9S8 strengthens electron interactions, ultimately enhancing the high‐frequency dielectric polarization (ɛ′ from 10.5 to 12.5 at 12 GHz). For the Fe‐doped Co9S8, the effective absorption bandwidth (EAB) at 1.7 mm increases by 5%, and the minimum reflection loss (RLmin) improves by 26% (EAB = 5.8 GHz, RLmin = −46 dB). The methodology of atomic‐scale fixed‐point doping presents a promising avenue for customizing the dielectric properties of nanomaterials, imparting invaluable insights for the design of cutting‐edge high‐performance microwave absorption materials. Fixed‐point doping strategy is developed in the spinel phase metal sulfide Co9S8 by Fe and Ni elements to modify the dielectric behavior and microwave absorption (MA) properties.
ISSN:1613-6810
1613-6829
1613-6829
DOI:10.1002/smll.202401878