InSb all-dielectric metasurface for ultrahigh efficient Si-based mid-infrared detection

Mid-infrared (MIR) Si-based optoelectronics has wide potential applications, and its design requires simultaneous consideration of device performance optimization and the feasibility of heterogeneous integration. The emerging interest in all-dielectric metasurfaces for optoelectronic applications st...

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Bibliographic Details
Published in:Optics letters 2024-05, Vol.49 (10), p.2641-2644
Main Authors: Wang, Sheng Yi, Wang, Qiu, Luo, Hao, Ge, Hua, Li, Xiang, Jia, Bo Wen
Format: Article
Language:English
Subjects:
Absorption
Absorptivity
Dielectrics
Indium antimonide
Intermetallic compounds
Metasurfaces
Optoelectronics
Silicon
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Summary:Mid-infrared (MIR) Si-based optoelectronics has wide potential applications, and its design requires simultaneous consideration of device performance optimization and the feasibility of heterogeneous integration. The emerging interest in all-dielectric metasurfaces for optoelectronic applications stems from their exceptional ability to manipulate light. In this Letter, we present our research on an InSb all-dielectric metasurface designed to achieve ultrahigh absorptivity within the 5-5.5 µm wavelength range. By integrating an InSb nanodisk array layer on a Si platform using wafer bonding and heteroepitaxial growth, we demonstrate three kinds of metasurface with high absorptivity of 98.36%, 99.28%, and 99.18%. The enhanced absorption is mainly contributed by the Kerker effect and the anapole state and the peak, with the added flexibility of tuning both the peak and bandwidth of absorption by altering the metasurface parameters. Our findings provide an alternative scheme to develop high-performance detectors and absorbers for MIR silicon photonics.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.519664