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InSb all-dielectric metasurface for ultrahigh efficient Si-based mid-infrared detection
Mid-infrared (MIR) Si-based optoelectronics has wide potential applications, and its design requires simultaneous consideration of device performance optimization and the feasibility of heterogeneous integration. The emerging interest in all-dielectric metasurfaces for optoelectronic applications st...
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Published in: | Optics letters 2024-05, Vol.49 (10), p.2641-2644 |
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creator | Wang, Sheng Yi Wang, Qiu Luo, Hao Ge, Hua Li, Xiang Jia, Bo Wen |
description | Mid-infrared (MIR) Si-based optoelectronics has wide potential applications, and its design requires simultaneous consideration of device performance optimization and the feasibility of heterogeneous integration. The emerging interest in all-dielectric metasurfaces for optoelectronic applications stems from their exceptional ability to manipulate light. In this Letter, we present our research on an InSb all-dielectric metasurface designed to achieve ultrahigh absorptivity within the 5-5.5 µm wavelength range. By integrating an InSb nanodisk array layer on a Si platform using wafer bonding and heteroepitaxial growth, we demonstrate three kinds of metasurface with high absorptivity of 98.36%, 99.28%, and 99.18%. The enhanced absorption is mainly contributed by the Kerker effect and the anapole state and the peak, with the added flexibility of tuning both the peak and bandwidth of absorption by altering the metasurface parameters. Our findings provide an alternative scheme to develop high-performance detectors and absorbers for MIR silicon photonics. |
doi_str_mv | 10.1364/OL.519664 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_3055453467</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3055453467</sourcerecordid><originalsourceid>FETCH-LOGICAL-c273t-d4e08fc4876988350b9b3c2abd805d440f25ff248f9fb6d478f965c1e38c05e3</originalsourceid><addsrcrecordid>eNpdkMtKAzEUhoMotlYXvoAMuNHF1GRymWQpxUthoIsWXA6Z5MSmzKUmMwvf3imtLlyd_8DHzzkfQrcEzwkV7GlVzDlRQrAzNCWcqpTlip2jKSZMpIqrbIKuYtxhjEVO6SWaUJkzSTI-RR_Ldl0luq5T66EG0wdvkgZ6HYfgtIHEdSEZ6j7orf_cJuCcNx7aPln7tNIRbNJ4m_rWBR3GxUI_dviuvUYXTtcRbk5zhjavL5vFe1qs3paL5yI1WU771DLA0hkmc6GkpBxXqqIm05WVmFvGsMu4cxmTTrlKWJaPQXBDgEqDOdAZejjW7kP3NUDsy8ZHA3WtW-iGWFLMOeOUjX_P0P0_dNcNoR2PO1A5ZYQpMlKPR8qELsYArtwH3-jwXRJcHmSXq6I8yh7Zu1PjUDVg_8hfu_QH0QN4yQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3057341491</pqid></control><display><type>article</type><title>InSb all-dielectric metasurface for ultrahigh efficient Si-based mid-infrared detection</title><source>OSA_美国光学学会数据库1</source><creator>Wang, Sheng Yi ; Wang, Qiu ; Luo, Hao ; Ge, Hua ; Li, Xiang ; Jia, Bo Wen</creator><creatorcontrib>Wang, Sheng Yi ; Wang, Qiu ; Luo, Hao ; Ge, Hua ; Li, Xiang ; Jia, Bo Wen</creatorcontrib><description>Mid-infrared (MIR) Si-based optoelectronics has wide potential applications, and its design requires simultaneous consideration of device performance optimization and the feasibility of heterogeneous integration. The emerging interest in all-dielectric metasurfaces for optoelectronic applications stems from their exceptional ability to manipulate light. In this Letter, we present our research on an InSb all-dielectric metasurface designed to achieve ultrahigh absorptivity within the 5-5.5 µm wavelength range. By integrating an InSb nanodisk array layer on a Si platform using wafer bonding and heteroepitaxial growth, we demonstrate three kinds of metasurface with high absorptivity of 98.36%, 99.28%, and 99.18%. The enhanced absorption is mainly contributed by the Kerker effect and the anapole state and the peak, with the added flexibility of tuning both the peak and bandwidth of absorption by altering the metasurface parameters. Our findings provide an alternative scheme to develop high-performance detectors and absorbers for MIR silicon photonics.</description><identifier>ISSN: 0146-9592</identifier><identifier>EISSN: 1539-4794</identifier><identifier>DOI: 10.1364/OL.519664</identifier><identifier>PMID: 38748125</identifier><language>eng</language><publisher>United States: Optical Society of America</publisher><subject>Absorption ; Absorptivity ; Dielectrics ; Indium antimonide ; Intermetallic compounds ; Metasurfaces ; Optoelectronics ; Silicon</subject><ispartof>Optics letters, 2024-05, Vol.49 (10), p.2641-2644</ispartof><rights>Copyright Optical Society of America May 15, 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c273t-d4e08fc4876988350b9b3c2abd805d440f25ff248f9fb6d478f965c1e38c05e3</cites><orcidid>0000-0002-2977-3846 ; 0000-0002-0001-3851</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,3258,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/38748125$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, Sheng Yi</creatorcontrib><creatorcontrib>Wang, Qiu</creatorcontrib><creatorcontrib>Luo, Hao</creatorcontrib><creatorcontrib>Ge, Hua</creatorcontrib><creatorcontrib>Li, Xiang</creatorcontrib><creatorcontrib>Jia, Bo Wen</creatorcontrib><title>InSb all-dielectric metasurface for ultrahigh efficient Si-based mid-infrared detection</title><title>Optics letters</title><addtitle>Opt Lett</addtitle><description>Mid-infrared (MIR) Si-based optoelectronics has wide potential applications, and its design requires simultaneous consideration of device performance optimization and the feasibility of heterogeneous integration. The emerging interest in all-dielectric metasurfaces for optoelectronic applications stems from their exceptional ability to manipulate light. In this Letter, we present our research on an InSb all-dielectric metasurface designed to achieve ultrahigh absorptivity within the 5-5.5 µm wavelength range. By integrating an InSb nanodisk array layer on a Si platform using wafer bonding and heteroepitaxial growth, we demonstrate three kinds of metasurface with high absorptivity of 98.36%, 99.28%, and 99.18%. The enhanced absorption is mainly contributed by the Kerker effect and the anapole state and the peak, with the added flexibility of tuning both the peak and bandwidth of absorption by altering the metasurface parameters. Our findings provide an alternative scheme to develop high-performance detectors and absorbers for MIR silicon photonics.</description><subject>Absorption</subject><subject>Absorptivity</subject><subject>Dielectrics</subject><subject>Indium antimonide</subject><subject>Intermetallic compounds</subject><subject>Metasurfaces</subject><subject>Optoelectronics</subject><subject>Silicon</subject><issn>0146-9592</issn><issn>1539-4794</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpdkMtKAzEUhoMotlYXvoAMuNHF1GRymWQpxUthoIsWXA6Z5MSmzKUmMwvf3imtLlyd_8DHzzkfQrcEzwkV7GlVzDlRQrAzNCWcqpTlip2jKSZMpIqrbIKuYtxhjEVO6SWaUJkzSTI-RR_Ldl0luq5T66EG0wdvkgZ6HYfgtIHEdSEZ6j7orf_cJuCcNx7aPln7tNIRbNJ4m_rWBR3GxUI_dviuvUYXTtcRbk5zhjavL5vFe1qs3paL5yI1WU771DLA0hkmc6GkpBxXqqIm05WVmFvGsMu4cxmTTrlKWJaPQXBDgEqDOdAZejjW7kP3NUDsy8ZHA3WtW-iGWFLMOeOUjX_P0P0_dNcNoR2PO1A5ZYQpMlKPR8qELsYArtwH3-jwXRJcHmSXq6I8yh7Zu1PjUDVg_8hfu_QH0QN4yQ</recordid><startdate>20240515</startdate><enddate>20240515</enddate><creator>Wang, Sheng Yi</creator><creator>Wang, Qiu</creator><creator>Luo, Hao</creator><creator>Ge, Hua</creator><creator>Li, Xiang</creator><creator>Jia, Bo Wen</creator><general>Optical Society of America</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-2977-3846</orcidid><orcidid>https://orcid.org/0000-0002-0001-3851</orcidid></search><sort><creationdate>20240515</creationdate><title>InSb all-dielectric metasurface for ultrahigh efficient Si-based mid-infrared detection</title><author>Wang, Sheng Yi ; Wang, Qiu ; Luo, Hao ; Ge, Hua ; Li, Xiang ; Jia, Bo Wen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c273t-d4e08fc4876988350b9b3c2abd805d440f25ff248f9fb6d478f965c1e38c05e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Absorption</topic><topic>Absorptivity</topic><topic>Dielectrics</topic><topic>Indium antimonide</topic><topic>Intermetallic compounds</topic><topic>Metasurfaces</topic><topic>Optoelectronics</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Sheng Yi</creatorcontrib><creatorcontrib>Wang, Qiu</creatorcontrib><creatorcontrib>Luo, Hao</creatorcontrib><creatorcontrib>Ge, Hua</creatorcontrib><creatorcontrib>Li, Xiang</creatorcontrib><creatorcontrib>Jia, Bo Wen</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Sheng Yi</au><au>Wang, Qiu</au><au>Luo, Hao</au><au>Ge, Hua</au><au>Li, Xiang</au><au>Jia, Bo Wen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InSb all-dielectric metasurface for ultrahigh efficient Si-based mid-infrared detection</atitle><jtitle>Optics letters</jtitle><addtitle>Opt Lett</addtitle><date>2024-05-15</date><risdate>2024</risdate><volume>49</volume><issue>10</issue><spage>2641</spage><epage>2644</epage><pages>2641-2644</pages><issn>0146-9592</issn><eissn>1539-4794</eissn><abstract>Mid-infrared (MIR) Si-based optoelectronics has wide potential applications, and its design requires simultaneous consideration of device performance optimization and the feasibility of heterogeneous integration. The emerging interest in all-dielectric metasurfaces for optoelectronic applications stems from their exceptional ability to manipulate light. In this Letter, we present our research on an InSb all-dielectric metasurface designed to achieve ultrahigh absorptivity within the 5-5.5 µm wavelength range. By integrating an InSb nanodisk array layer on a Si platform using wafer bonding and heteroepitaxial growth, we demonstrate three kinds of metasurface with high absorptivity of 98.36%, 99.28%, and 99.18%. The enhanced absorption is mainly contributed by the Kerker effect and the anapole state and the peak, with the added flexibility of tuning both the peak and bandwidth of absorption by altering the metasurface parameters. Our findings provide an alternative scheme to develop high-performance detectors and absorbers for MIR silicon photonics.</abstract><cop>United States</cop><pub>Optical Society of America</pub><pmid>38748125</pmid><doi>10.1364/OL.519664</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-2977-3846</orcidid><orcidid>https://orcid.org/0000-0002-0001-3851</orcidid></addata></record> |
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source | OSA_美国光学学会数据库1 |
subjects | Absorption Absorptivity Dielectrics Indium antimonide Intermetallic compounds Metasurfaces Optoelectronics Silicon |
title | InSb all-dielectric metasurface for ultrahigh efficient Si-based mid-infrared detection |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T09%3A37%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InSb%20all-dielectric%20metasurface%20for%20ultrahigh%20efficient%20Si-based%20mid-infrared%20detection&rft.jtitle=Optics%20letters&rft.au=Wang,%20Sheng%20Yi&rft.date=2024-05-15&rft.volume=49&rft.issue=10&rft.spage=2641&rft.epage=2644&rft.pages=2641-2644&rft.issn=0146-9592&rft.eissn=1539-4794&rft_id=info:doi/10.1364/OL.519664&rft_dat=%3Cproquest_cross%3E3055453467%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c273t-d4e08fc4876988350b9b3c2abd805d440f25ff248f9fb6d478f965c1e38c05e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=3057341491&rft_id=info:pmid/38748125&rfr_iscdi=true |