On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC

Rhombohedral boron carbide, often referred to as r-B4C, is a potential material for applications in optoelectronic and thermoelectric devices. From fundamental thin film growth and characterization, we investigate the film-substrate interface between the r-B4C films grown on 4H-SiC (0001) (C-face) a...

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Bibliographic Details
Published in:Dalton transactions : an international journal of inorganic chemistry 2024-06, Vol.53 (25), p.10730-10736
Main Authors: Sharma, Sachin, Souqui, Laurent, Palisaitis, Justinas, Hoang, Duc Quang, Ivanov, Ivan G, Per O Å Persson, Högberg, Hans, Pedersen, Henrik
Format: Article
Language:English
Subjects:
Boron carbide
Carbon
Chemical vapor deposition
Electron energy loss spectroscopy
Epitaxial growth
Film growth
Interlayers
Optoelectronic devices
Raman spectroscopy
Silicon carbide
Substrates
Surface roughness
Thin films
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Summary:Rhombohedral boron carbide, often referred to as r-B4C, is a potential material for applications in optoelectronic and thermoelectric devices. From fundamental thin film growth and characterization, we investigate the film-substrate interface between the r-B4C films grown on 4H-SiC (0001) (C-face) and 4H-SiC (0001) (Si-face) during chemical vapor deposition (CVD) to find the origin for epitaxial growth solely observed on the C-face. We used high-resolution (scanning) transmission electron microscopy and electron energy loss spectroscopy to show that there is no surface roughness or additional carbon-based interlayer formation for either substrate. Based on Raman spectroscopy analysis, we also argue that carbon accumulation on the surface hinders the growth of continued epitaxial r-B4C in CVD.
ISSN:1477-9226
1477-9234
1477-9234
DOI:10.1039/d4dt01157k