An Antiferromagnetic Neuromorphic Memory Based on Perpendicularly Magnetized CoO

Antiferromagnets (AFMs) are ideal materials to boost neuromorphic computing toward the ultrahigh speed and ultracompact integration regime. However, developing a suitable AFM neuromorphic memory remains an aspirational but challenging goal. In this work, we construct such a memory based on the CoO/P...

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Bibliographic Details
Published in:Nano letters 2024-09, Vol.24 (36), p.11187-11193
Main Authors: Xiang, Xueqiang, Xu, Jiankang, Zhang, Zhongfang, Jiang, Siyuan, Wang, Yalong, Wu, Biao, Wang, Wei, Hou, Xiaohu, Xu, Guangwei, Zhao, Xiaolong, Gao, Nan, Long, Shibing
Format: Article
Language:English
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Summary:Antiferromagnets (AFMs) are ideal materials to boost neuromorphic computing toward the ultrahigh speed and ultracompact integration regime. However, developing a suitable AFM neuromorphic memory remains an aspirational but challenging goal. In this work, we construct such a memory based on the CoO/Pt heterostructure, in which the collinear insulating AFM CoO shows a strong perpendicular anisotropy facilitating its electrical readout and writing. Utilizing the unique nonlinear response and bipolar fading memory properties of the device, we demonstrate a multidimensional reservoir computing beyond the traditional binary paradigm. These results are expected to pave the way toward next-generation fast and massive neuromorphic computing.
ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/acs.nanolett.4c02340