Cathodic and Anodic Material Diffusion in Polymer/Semiconductor-Nanocrystal Composite Devices

Electrode material diffusion in polymer/nanoparticle composite devices has been detected after the application of high electric fields (107 V m–1). Composition depth profiles obtained with SIMS show diffusion of material from both the aluminium cathode and the ITO anode. This diffusion can cause dev...

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Published in:Advanced materials (Weinheim) 2007-10, Vol.19 (20), p.3364-3367
Main Authors: Gallardo, D. E., Bertoni, C., Dunn, S., Gaponik, N., Eychmüller, A.
Format: Article
Language:English
Subjects:
Alumina
Composite materials
Indium tin oxide
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description Electrode material diffusion in polymer/nanoparticle composite devices has been detected after the application of high electric fields (107 V m–1). Composition depth profiles obtained with SIMS show diffusion of material from both the aluminium cathode and the ITO anode. This diffusion can cause device failure even in low current regimes. The growth of the aluminium oxide is explained in terms of the Mott model.
doi_str_mv 10.1002/adma.200700394
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subjects Alumina
Composite materials
Indium tin oxide
title Cathodic and Anodic Material Diffusion in Polymer/Semiconductor-Nanocrystal Composite Devices
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