Advance in next Century nanoCMOSFET research

• Published in: Applied surface science 2007-10, Vol.254 (1), p.236-241
• Main Authors: Hwang, Huey-Liang, Chiou, Yan-Kai, Chang, Che-Hao, Wang, Chen-Chan, Lee, Kun-Yu, Wu, Tai-Bor, Kwo, Raynien, Hong, Minghwei, Chang-Liao, Kuei-Shu, Lu, Chun-Yuan, Lu, Chun-Chang, Chiu, Fu-Chien, Chen, Chun-Heng, Lee, Joseph Ya-Min, Chin, Albert
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electrical properties of specific thin films; Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots); Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Field effect devices; High-k dielectric; Metal gate; MOSFET; Nano; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2007.07.117

It is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65 nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years.