Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

• Published in: Journal of crystal growth 2007-10, Vol.308 (1), p.170-175
• Main Authors: Heinze, S., Krtschil, A., Bläsing, J., Hempel, T., Veit, P., Dadgar, A., Christen, J., Krost, A.
• Format: Article
• Language: English
• Subjects: A3. Homoepitaxy; A3. Metalorganic vapor-phase epitaxy; B1. ZnO; B2. Semiconducting II–VI materials; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2007.07.024

We describe the successful homoepitaxial growth of ZnO layers on oxygen-face ZnO substrates by metalorganic vapor-phase epitaxy in two-dimensional growth mode. In detail, we discuss the impact of the oxygen/zinc precursor ratio using N 2O and O 2 as oxygen precursors, growth temperature, and reactor pressure on structural properties and surface morphology as obtained by X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy measurements. Optimizing the growth parameters leads to smooth layers, ending up in a mirror-like surface grown in two-dimensional growth mode. The structural layer properties are found to be significantly governed by the substrate properties.