Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer

Quantum dot light‐emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi‐monolayer of colloidal nanocrystals on a crosslinked hole‐transport layer. Partial desorption of quantum‐dot surface ligands and improved fi...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2007-10, Vol.19 (20), p.3371-3376
Main Authors: Niu, Y. H., Munro, A. M., Cheng, Y.-J., Tian, Y. Q., Liu, M. S., Zhao, J. L., Bardecker, J. A., Jen-La Plante, I., Ginger, D. S., Jen, A. K.-Y.
Format: Article
Language:English
Subjects:
Hole-transport materials
Light-emitting diodes
Nanocrystals
Quantum dots
Thermal crosslink
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Summary:Quantum dot light‐emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi‐monolayer of colloidal nanocrystals on a crosslinked hole‐transport layer. Partial desorption of quantum‐dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200602373