Photonic topological phase transition induced by material phase transition

• Published in: Science advances 2024-08, Vol.10 (34), p.eadp7779
• Main Authors: Uemura, Takahiro, Moritake, Yuto, Yoda, Taiki, Chiba, Hisashi, Tanaka, Yusuke, Ono, Masaaki, Kuramochi, Eiichi, Notomi, Masaya
• Format: Article
• Language: English
• ISSN: 2375-2548; 2375-2548
• DOI: 10.1126/sciadv.adp7779

Photonic topological insulators (PTIs) have been proposed as an analogy to topological insulators in electronic systems. In particular, two-dimensional PTIs have gained attention for the integrated circuit applications. However, controlling the topological phase after fabrication is difficult because the photonic topology requires the built-in specific structures. This study experimentally demonstrates the band inversion in two-dimensional PTI induced by the phase transition of deliberately designed nanopatterns of a phase change material, Ge Sb Te (GST), which indicates the first observation of the photonic topological phase transition in two-dimensional PTI with changes in the Chern number. This approach allows us to directly alter the topological invariants, which is achieved by symmetry-breaking perturbation through GST nanopatterns with different symmetry from original PTI. The success of our scheme is attributed to the ultrafine lithographic alignment technologies of GST nanopatterns. These results demonstrate how to control photonic topological properties in a reconfigurable manner, providing insight into the possibilities for reconfigurable photonic processing circuits.