Strain measurements of silicon dioxide microspecimens by digital imaging processing

• Published in: Experimental mechanics 2007-10, Vol.47 (5), p.649-658
• Main Authors: SHARPE, W. N, PULSKAMP, J, GIANOLA, D. S, EBERL, C, POLCAWICH, R. G, THOMPSON, R. J
• Format: Article
• Language: English
• Subjects: Exact sciences and technology; Fracture mechanics (crack, fatigue, damage...); Fundamental areas of phenomenology (including applications); Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Measurement and testing methods; Measurements common to several branches of physics and astronomy; Mechanical instruments, equipment and techniques; Metrology, measurements and laboratory procedures; Micromechanical devices and systems; Physics; Solid mechanics; Structural and continuum mechanics; Velocity, acceleration and rotation
• ISSN: 0014-4851; 1741-2765
• DOI: 10.1007/s11340-006-9010-z

Silicon dioxide thin film is a common component in electronic devices and in MEMS, but its mechanical properties have rarely been studied. Techniques have been adapted and developed to conduct tensile tests on 1.0 mum thick silicon dioxide specimens that are 100, 150, and 200 mum wide and either 1 or 2 mm long. One end of the specimen remains fastened to the substrate, and the other is glued to a silicon carbide fiber attached to a 30 g load cell mounted on a piezoelectric translation stage. Strain is measured by digital imaging of two gold lines applied to the gage section of the transparent specimen. Twenty-five tests yield a Young's modulus of 60.1+/-3.4 GPa and a fracture strength of 364+/-57 MPa.