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Covalent Immobilization of Mediators on Photoelectrodes for NADH Regeneration
The reduced nicotinamide adenine dinucleotide (NADH) is a vital biomolecule involved in many biocatalytic processes, and the high cost makes it significant to regenerate NADH in vitro. The photoelectrochemical approach is a promising and environmentally friendly method for sustainable NADH regenerat...
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Published in: | ACS applied materials & interfaces 2024-09, Vol.16 (38), p.50826-50833 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | The reduced nicotinamide adenine dinucleotide (NADH) is a vital biomolecule involved in many biocatalytic processes, and the high cost makes it significant to regenerate NADH in vitro. The photoelectrochemical approach is a promising and environmentally friendly method for sustainable NADH regeneration. However, the free Rh-based mediator ([Cp*Rh (bpy)H2O]2+) in the electrolyte suffers from low efficiency due to the sluggish charge transfer controlled by the diffusion process. Herein, we report an efficient and facile covalent bonding of the Rh-based mediator with the Si-based photocathode for NADH regeneration. The bipyridine-containing covalent organic framework (BpyCOF) layer ensures the even distribution of mediators throughout the surface of the photoelectrode. The graphene interlayer provides a pathway for charge transport and prevents silicon from corrosion. Furthermore, during the synthesis of BpyCOF, it functions as a substrate to promote the growth of the oriented BpyCOF film. The imitated contact between the components of the photocathode favors the charge transfer to the surface to participate in a chemical reaction, thus improving the catalytic performance and the NADH regeneration efficiency, which is four times higher than the reported photocathode modified by the Rh-based mediator. This study offers a new strategy for the construction of photoelectrochemical solar energy conversion devices. |
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ISSN: | 1944-8244 1944-8252 1944-8252 |
DOI: | 10.1021/acsami.4c11066 |