Spin Hall-induced bilinear magnetoelectric resistance

Magnetoresistance is a fundamental transport phenomenon that is essential for reading the magnetic states for various information storage, innovative computing and sensor devices. Recent studies have expanded the scope of magnetoresistances to the nonlinear regime, such as a bilinear magnetoelectric...

Full description

Saved in:
Bibliographic Details
Published in:Nature materials 2024-11, Vol.23 (11), p.1509-1514
Main Authors: Kim, Dong-Jun, Kim, Kyoung-Whan, Lee, Kyusup, Oh, Jung Hyun, Chen, Xinhou, Yang, Shuhan, Pu, Yuchen, Liu, Yakun, Hu, Fanrui, Cao Van, Phuoc, Jeong, Jong-Ryul, Lee, Kyung-Jin, Yang, Hyunsoo
Format: Article
Language:English
Subjects:
639/301/119/1001
639/766/119/997
Antiferromagnetism
Biomaterials
Chemistry and Materials Science
Condensed Matter Physics
Electric fields
Electromagnetism
Hall effect
Heavy metals
Information storage
Magnetic fields
Magnetoresistance
Magnetoresistivity
Materials Science
Nanotechnology
Nonlinear systems
Optical and Electronic Materials
Spintronics
Transport phenomena
Transport properties
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Magnetoresistance is a fundamental transport phenomenon that is essential for reading the magnetic states for various information storage, innovative computing and sensor devices. Recent studies have expanded the scope of magnetoresistances to the nonlinear regime, such as a bilinear magnetoelectric resistance (BMER), which is proportional to both electric field and magnetic field. Here we demonstrate that the BMER is a general phenomenon that arises even in three-dimensional systems without explicit momentum-space spin textures. Our theory suggests that the spin Hall effect enables the BMER provided that the magnitudes of spin accumulation at the top and bottom interfaces are not identical. The sign of the BMER follows the sign of the spin Hall effect of heavy metals, thereby evidencing that the BMER originates from the bulk spin Hall effect. Our observation suggests that the BMER serves as a general nonlinear transport characteristic in three-dimensional systems, especially playing a crucial role in antiferromagnetic spintronics. The spin Hall-induced bilinear magnetoelectric resistance is a general phenomenon that arises in three-dimensional systems, particularly playing a crucial role in antiferromagnetic spintronics.
ISSN:1476-1122
1476-4660
1476-4660
DOI:10.1038/s41563-024-02000-0