Fabrication of one‐dimensional Zn‐doped Bi2S3 nanorods for photodiode applications

In this research, the impact of the different zinc (Zn) concentrations on the physical and optoelectronic properties of Bi2S3 nanorods as self‐powered and photodiode applications was investigated. The performance of P‐N junction photodiodes has been for decades since they are crucial in energy appli...

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Published in:Luminescence (Chichester, England) England), 2024-09, Vol.39 (9), p.e4901-n/a
Main Authors: Arumugam, Jayachandhiran, George, Amal, Saravanan, P., Rahul, Subramani, Raj, Alphonse Dhayal, Albeshr, Mohammed F., Johnsundaram, Savarenathan, Selvankumar, Thangaswamy, Karthika, Duraisamy, Kumar, Jothi Vinoth
Format: Article
Language:English
Subjects:
Bismuth sulfides
Degree of crystallinity
Fabrication
Graphs
Illumination
Immersion coating
Indium
Indium tin oxides
Nanorods
Optoelectronics
photocurrent
Photodiodes
Photoelectric effect
P‐N junction
Substrates
Tin
Zinc
Zn‐doped Bi2S3 nanorods
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Summary:In this research, the impact of the different zinc (Zn) concentrations on the physical and optoelectronic properties of Bi2S3 nanorods as self‐powered and photodiode applications was investigated. The performance of P‐N junction photodiodes has been for decades since they are crucial in energy applications. The structure, degree of crystallinity, and shape of Zn‐doped Bi2S3 nanorods of various doping percentages formed onto the indium tin oxide (ITO) substrates by the dip coating technique are investigated using X‐ray powder diffraction (XRD) and SEM. With increasing illumination time, the current–voltage (I–V) graphs demonstrate a rise in photocurrent. The diode's idealist factor was estimated using the I–V technique under 30 min of light illumination. The impact of the different zinc (Zn) concentrations on the physical and optoelectronic properties of Bi2S3 nanorods as self‐powered and photodiodes applications.
ISSN:1522-7235
1522-7243
1522-7243
DOI:10.1002/bio.4901