Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate

• Published in: ACS applied materials & interfaces 2024-10, Vol.16 (41), p.55619-55626
• Main Authors: Zhao, Zijian, Woo, Sola, Aabrar, Khandker Akif, Kirtania, Sharadindu Gopal, Jiang, Zhouhang, Deng, Shan, Xiao, Yi, Mulaosmanovic, Halid, Duenkel, Stefan, Kleimaier, Dominik, Soss, Steven, Beyer, Sven, Joshi, Rajiv, Meninger, Scott, Mohamed, Mohamed, Kim, Kijoon, Woo, Jongho, Lim, Suhwan, Kim, Kwangsoo, Kim, Wanki, Ha, Daewon, Narayanan, Vijaykrishnan, Datta, Suman, Yu, Shimeng, Ni, Kai
• Format: Article
• Language: English
• Subjects: Functional Inorganic Materials and Devices
• ISSN: 1944-8244; 1944-8252; 1944-8252
• DOI: 10.1021/acsami.4c08190

In this work, we propose a dual-port cell design to address the pass disturbance in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that (i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-V TH (HVT) state and the screening of the applied field by the channel at the low-V TH (LVT) state; (ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; (iii) the proposed design can be incorporated into a highly scaled vertical NAND FeFET string, and the pass gate can be incorporated into the existing three-dimensional (3D) NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate.