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Preparation of V2O5–Ink for the Fabrication of V2O5 Thin Films by the Spin Coating Method

This article reports the preparation of V2O5 ink via a novel chemical route. The prepared V2O5 ink has been spin coated for the synthesis of V2O5 thin films on glass substrates. The synthesized V2O5 thin films were annealed at 300–400 °C in air and characterized by different techniques. The X-ray di...

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Bibliographic Details
Published in:Inorganic chemistry 2024-10, Vol.63 (42), p.19707-19716
Main Authors: Nushin, Syeda Samiha, Ebon, Md. Islahur Rahman, Munna, Md. Shamiull Alim, Rabbi, Md. Ahasanur, Rahman, Md. Mahbubor, Hossain, Jaker
Format: Article
Language:English
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Summary:This article reports the preparation of V2O5 ink via a novel chemical route. The prepared V2O5 ink has been spin coated for the synthesis of V2O5 thin films on glass substrates. The synthesized V2O5 thin films were annealed at 300–400 °C in air and characterized by different techniques. The X-ray diffraction data reveal the phase pure V2O5 compound with polycrystalline nature. The scanning electron microscopy micrographs unravel that the V2O5 thin films are smooth with few nanoflakes presented on the surfaces. An optical study reveals that transmittance and bandgap of the V2O5 thin films decrease with annealing temperature. The bandgap of the films varies in the range of 2.8–2.9 eV. These findings have opened a new avenue for the preparation of metal oxide ink. The prepared V2O5 ink is promising for the manufacture of low-cost V2O5-based photoelectrochemical cells.
ISSN:0020-1669
1520-510X
1520-510X
DOI:10.1021/acs.inorgchem.4c02892