Controllable Synthesis of WSe2–WS2 Lateral Heterostructures via Atomic Substitution

• Published in: ACS nano 2024-11, Vol.18 (44), p.30321-30331
• Main Authors: Zhang, Shunhui, Liu, Hang, Zhang, Fen, Zheng, Xiaoming, Zhang, Xiangzhe, Zhang, Baihui, Zhang, Tian, Ao, Zhikang, Zhang, Xuyang, Lan, Xiang, Yang, Xiangdong, Zhong, Mianzeng, Li, Jia, Li, Bo, Ma, Huifang, Duan, Xidong, He, Jun, Zhang, Zhengwei
• Format: Article
• Language: English
• ISSN: 1936-0851; 1936-086X; 1936-086X
• DOI: 10.1021/acsnano.4c06597

The atomic substitution in two-dimensional (2D) materials is propitious to achieving compositionally engineered semiconductor heterostructures. However, elucidating the mechanism and developing methods to synthesize 2D heterostructures with atomic-scale precision are crucial. Here, we demonstrate the synthesis of monolayer WSe2–WS2 heterostructures with a relatively sharp interface from monolayer WSe2 using a chalcogen atom-exchange synthesis route at high temperatures for short periods. The substitution was initiated at the edges of monolayer WSe2 and the lateral diffuse along the heterointerface, and the reaction can be controlled by the precise reaction time and temperature. The lateral heterostructure and substitution process are studied by Raman and photoluminescence (PL) spectroscopies, electron microscopy, and device characterization, revealing a possible mechanism of strain-induced transformation. Our findings demonstrate a highly controllable synthesis of 2D layered materials through atom substitutional chemistry and provide a simple route to control the atomic structure.