High-Performance Gate-Voltage-Tunable Photodiodes Based on Nb2Pd3Se8/WSe2 Mixed-Dimensional Heterojunctions

• Published in: ACS applied materials & interfaces 2024-11, Vol.16 (46), p.63713-63722
• Main Authors: Qin, Qinggang, Xu, Zhengyu, Chen, Wei, Liu, Xue, Chen, Jiawang, Gao, Wenshuai, Li, Liang
• Format: Article
• Language: English
• Subjects: Functional Inorganic Materials and Devices
• ISSN: 1944-8244; 1944-8252; 1944-8252
• DOI: 10.1021/acsami.4c09682

The mixed-dimensional (MD) van der Waals (vdWs) heterojunction for photodetectors has garnered significant attention owing to its exceptional compatibility and superior quality. Low-dimensional material heterojunctions exhibit unique photoelectric properties attributed to their nanoscale thickness and vdWs contact surfaces. In this work, a novel MD vdWs heterojunction composed of one-dimensional (1D) Nb2Pd3Se8 nanowires and two-dimensional (2D) WSe2 nanosheets is proposed. The heterojunction’s energy band engineering is accomplished by manipulating the Fermi level of the bipolar 2D material via gate voltage, resulting in a rectification characteristic that can be adjusted with gate voltage. Under 685 nm laser irradiation, it demonstrates exceptional self-powered photodetection performance, attaining a photoresponsivity of 1.45 A W–1, an ultrahigh detectivity of 6.8 × 1012 Jones, and an ultrafast response time of 37/64 μs at zero bias. In addition, a broadband photodetector from 255 to 1064 nm is realized. These results demonstrate the great potential of Nb2Pd3Se8/WSe2 MD heterostructures for advanced electronic and optoelectronic devices.