Magnetic properties of HfO2 thin films

We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: th...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2007-12, Vol.19 (48), p.486206-486206 (12)
Main Authors: Hadacek, N, Nosov, A, Ranno, L, Strobel, P, Galéra, R-M
Format: Article
Language:English
Subjects:
Condensed Matter
Physics
Strongly Correlated Electrons
Online Access:Get full text
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Summary:We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: the film grown at low oxygen pressure (P10-7 mbar) has a metallic aspect and is conducting, with a positive Hall signal, while those grown under higher oxygen pressures (7 X 10-5 < =P < =0.4 mbar) are insulating. However, no intrinsic ferromagnetic signal could be attributed to the HfO2 films, irrespective of the oxygen pressure during the deposition.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/19/48/486206