Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives

In this study, Y2O3-based resistive random-access memory (RRAM) devices with a mono-ethanolamine (MEA) stabilizer fabricated using the sol–gel process on indium tin oxide/glass substrates were investigated. The effects of MEA content on the structural, optical, chemical, and electrical characteristi...

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Bibliographic Details
Published in:Materials 2024-10, Vol.17 (21), p.5252
Main Authors: Heo, Seongwon, Choi, Soohyun, Lee, Sangwoo, Cho, Yoonjin, Bae, Jin-Hyuk, Kang, In-Man, Kim, Kwangeun, Lee, Won-Yong, Jang, Jaewon
Format: Article
Language:English
Subjects:
Crystallites
Electric fields
Electrodes
Fatigue tests
Film thickness
Glass substrates
Indium tin oxides
Lattice vacancies
Memory devices
Metal oxides
Microscopy
Oxygen
Radiation
Random access memory
Sol-gel processes
Yttrium oxide
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Summary:In this study, Y2O3-based resistive random-access memory (RRAM) devices with a mono-ethanolamine (MEA) stabilizer fabricated using the sol–gel process on indium tin oxide/glass substrates were investigated. The effects of MEA content on the structural, optical, chemical, and electrical characteristics were determined. As the MEA content increased, film thickness and crystallite size decreased. In particular, the increase in MEA content slightly decreased the oxygen vacancy concentration. The decreased film thickness decreased the physical distance for conductive filament formation, generating a strong electric field. However, owing to the lowest oxygen vacancy concentration, a large electrical field is required. To ensure data reliability, the endurance cycles across several devices were measured and presented statistically. Additionally, endurance performance improved with the increase in MEA content. Reduced oxygen vacancy concentration can successfully suppress the excess formation of the Ag conductive filament. This simplifies the transition from the high- to the low-resistance state and vice versa, thereby improving the endurance cycles of the RRAM devices.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma17215252