A Methodological Framework for Determining Optimal Dopant Density in a Biosensor Transducer

• Main Authors: Batzias, D F, Tsakiri, V, Sidiras, D K
• Format: Conference Proceeding
• Language: English
• ISSN: 0094-243X
• DOI: 10.1063/1.2836230

In all transducers of the doped FET-type (Field Effect Transistor), the most decisive independent variable is the dopant density, D, since it influences both, current amplification and threshold voltage. The present work deals with the development of a methodological framework, under the form of an algorithmic procedure, for the determination of optimal dopant density which is a principal component characterizing not only the product quality but also the functionality of the transducer that is of critical importance for any biosensor-type measuring device. The algorithmic procedure, including 17 activity stages and 5 decision nodes contains probabilistic and possibilistic subroutines to cope with objective and subjective probabilities and fuzzy reasoning. An implementation is presented concerning the application of interval analysis (to count for uncertainty) in the case of using silicon nitride in the construction of a biosensor's transducer and the results are shown in comparison with those obtained when using only pure silicon oxide. The influence of the `body effect' is also presented in the same way.