Construction of Cu2MoS4/ZnO Heterostructures and Mechanism of Photocatalytic Hydrogen Production

• Published in: Langmuir 2025-01
• Main Authors: Zhuang, Yanli, Cheng, Hao, Tian, Shuo, Hao, Yancheng, Pan, Jikun, Zhang, Zihuan, Li, Dan, Dong, Limin, Li, Jian, Li, You, Jin, Xinxin
• Format: Article
• Language: English
• ISSN: 1520-5827; 1520-5827
• DOI: 10.1021/acs.langmuir.4c04325

Constructing wide and narrow band gap heterogeneous semiconductors is a method to improve the activity of photocatalysts. In this paper, CMS/ZnO heterojunctions were prepared by solvothermal loading of ZnO particles on the surface of Cu2MoS4 nanosheets. The photocatalytic H2 precipitation rate is about 545 μmol·g-1·h-1, which is 6.8 times that of Cu2MoS4 and 3 times that of ZnO without any cocatalyst. After etching modification of CMS, the photocatalytic hydrogen production efficiency of the ECMS/ZnO heterojunction is further improved. Its hydrogen production efficiency reaches about 1115 μmol·g-1·h-1, which is 9 times that of ECMS and 6 times that of ZnO. The reasons are mainly attributed to the following two factors: (1) the formation of the ECMS/ZnO type-II-type heterojunction facilitates the effective separation of photogenerated electrons and holes; (2) the band structure of Cu2MoS4 was optimized by etching modification, which made the ECMS/ZnO heterojunction have lower interfacial charge transfer resistance and improved the photocatalytic hydrogen production activity of the heterojunction.Constructing wide and narrow band gap heterogeneous semiconductors is a method to improve the activity of photocatalysts. In this paper, CMS/ZnO heterojunctions were prepared by solvothermal loading of ZnO particles on the surface of Cu2MoS4 nanosheets. The photocatalytic H2 precipitation rate is about 545 μmol·g-1·h-1, which is 6.8 times that of Cu2MoS4 and 3 times that of ZnO without any cocatalyst. After etching modification of CMS, the photocatalytic hydrogen production efficiency of the ECMS/ZnO heterojunction is further improved. Its hydrogen production efficiency reaches about 1115 μmol·g-1·h-1, which is 9 times that of ECMS and 6 times that of ZnO. The reasons are mainly attributed to the following two factors: (1) the formation of the ECMS/ZnO type-II-type heterojunction facilitates the effective separation of photogenerated electrons and holes; (2) the band structure of Cu2MoS4 was optimized by etching modification, which made the ECMS/ZnO heterojunction have lower interfacial charge transfer resistance and improved the photocatalytic hydrogen production activity of the heterojunction.