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A stability diagram for crystal growth from the vapor - a review
Stability of the solid‐vapor interface is investigated. Surface roughening and evolution of flat faces at the growth interface is considered in terms of relation between gradient of temperature in the crystal and gradient of concentration in the vapor. Stability diagram is proposed, based on experim...
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Published in: | Crystal research and technology (1979) 2007-12, Vol.42 (12), p.1202-1206 |
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Main Author: | |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Stability of the solid‐vapor interface is investigated. Surface roughening and evolution of flat faces at the growth interface is considered in terms of relation between gradient of temperature in the crystal and gradient of concentration in the vapor. Stability diagram is proposed, based on experimental data. The diagram summarizes the various forms and structures, which can be obtained using a typical system for growth from the vapor. The critical lines for constitutional supersaturation and appearance of low and high index faces were plotted. This attempt to the problem of stability of the growth interface differs from the former investigations mainly in looking for dependence between temperature field and concentration field rather than between more absolute parameters like temperature and supersaturation. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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ISSN: | 0232-1300 1521-4079 |
DOI: | 10.1002/crat.200711006 |