GaInNAs(Sb) surface normal devices

After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III–V alloys and presents current progress in their exploitation in a variety of surface‐normal operating devices such as Vertical (External)‐Cavity Surface‐Emitting Lasers (...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2008-01, Vol.205 (1), p.85-92
Main Authors: Calvez, S., Laurand, N., Sun, H. D., Weda, J., Burns, D., Dawson, M. D., Harkonen, A., Jouhti, T., Pessa, M., Hopkinson, M., Poitras, D., Gupta, J. A., Leburn, C. G., Brown, C. T. A., Sibbett, W.
Format: Article
Language:English
Subjects:
42.55.Px
42.79.Hp
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Summary:After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III–V alloys and presents current progress in their exploitation in a variety of surface‐normal operating devices such as Vertical (External)‐Cavity Surface‐Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200777460