Hot-Target Laser Ablation is Critical for β-FeSi2 Growth on Si without Fragments

The smooth and fragment-free films of β -FeSi 2 have been deposited on Si wafers by means of the pulsed laser deposition method. The exciting ArF excimer laser oscillated at 193 nm in wavelength where the fluence and repetition frequency were 3.5 J/cm 2 and 5 Hz, respectively. On a surface of a Si (...

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Bibliographic Details
Published in:Metallurgical and materials transactions. A, Physical metallurgy and materials science Physical metallurgy and materials science, 2008, Vol.39 (1), p.130-134
Main Authors: Tode, Mayumi, Takigawa, Yasuo, Ohmukai, Masato
Format: Article
Language:English
Subjects:
Applied sciences
Characterization and Evaluation of Materials
Chemistry and Materials Science
Exact sciences and technology
Materials Science
Metallic Materials
Metals. Metallurgy
Nanotechnology
Structural Materials
Surfaces and Interfaces
Thin Films
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Summary:The smooth and fragment-free films of β -FeSi 2 have been deposited on Si wafers by means of the pulsed laser deposition method. The exciting ArF excimer laser oscillated at 193 nm in wavelength where the fluence and repetition frequency were 3.5 J/cm 2 and 5 Hz, respectively. On a surface of a Si (100) substrate kept at 750 °C, the deposited film consisted of a highly [100]-oriented single phase. It was found that the temperature of a ε -FeSi target should be kept up to 700 °C in order to obtain fragment-free epitaxial films.
ISSN:1073-5623
1543-1940
DOI:10.1007/s11661-007-9364-6