Unidirectional variation of lattice constants of Al–N-codoped ZnO films by RF magnetron sputtering

Al–N-codoped ZnO films were fabricated by RF magnetron sputtering in the ambient of N 2 and O 2 on silicon (1 0 0) and homo-buffer layer, subsequently, annealed in O 2 at low pressure. X-ray diffraction (XRD) spectra show that as-grown and 600 °C annealed films grown by codoping method are prolonged...

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Bibliographic Details
Published in:Applied surface science 2008-01, Vol.254 (7), p.2207-2210
Main Authors: Jin, Hu-Jie, Oh, Sang-Hyun, Park, Choon-Bae
Format: Article
Language:English
Subjects:
Codoping
Magnetron sputtering
Unidirectional variation
Unstressed position
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Summary:Al–N-codoped ZnO films were fabricated by RF magnetron sputtering in the ambient of N 2 and O 2 on silicon (1 0 0) and homo-buffer layer, subsequently, annealed in O 2 at low pressure. X-ray diffraction (XRD) spectra show that as-grown and 600 °C annealed films grown by codoping method are prolonged along crystal c-axis. However, they are not prolonged in (0 0 1) plane vertical to c-axis. The films annealed at 800 °C are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. X-ray photoelectron spectroscopy (XPS) shows that Al content hardly varies and N escapes with increasing annealing temperature from 600 °C to 800 °C.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2007.08.052