Site-dependent Eu luminescence in GaN:Eu epitaxial films studied by microscopic photoluminescence spectroscopy

We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films. The GaN:Eu3+ epitaxial films with a Eu3+ concentration of 1at.% exhibit red luminescence due to intra-4f transitions of Eu3+ ions and blue luminescence due to bound excitons of GaN host crystals at 20K. I...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008-05, Vol.146 (1-3), p.186-188
Main Authors: Ishizumi, A, Sawahata, J, Akimoto, K, Kanemitsu, Y
Format: Article
Language:English
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Summary:We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films. The GaN:Eu3+ epitaxial films with a Eu3+ concentration of 1at.% exhibit red luminescence due to intra-4f transitions of Eu3+ ions and blue luminescence due to bound excitons of GaN host crystals at 20K. In microscopic PL imaging spectroscopy experiments, the intensities of the PL due to the Eu3+ ions and due to the bound excitons are sensitive to the monitored position. The PL mechanisms of the GaN:Eu3+ epitaxial films are discussed.
ISSN:0921-5107
DOI:10.1016/j.mseb.2007.07.075