Site-dependent Eu luminescence in GaN:Eu epitaxial films studied by microscopic photoluminescence spectroscopy
We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films. The GaN:Eu3+ epitaxial films with a Eu3+ concentration of 1at.% exhibit red luminescence due to intra-4f transitions of Eu3+ ions and blue luminescence due to bound excitons of GaN host crystals at 20K. I...
Saved in:
Published in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2008-05, Vol.146 (1-3), p.186-188 |
---|---|
Main Authors: | , , , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | |
---|---|
cites | |
container_end_page | 188 |
container_issue | 1-3 |
container_start_page | 186 |
container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
container_volume | 146 |
creator | Ishizumi, A Sawahata, J Akimoto, K Kanemitsu, Y |
description | We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films. The GaN:Eu3+ epitaxial films with a Eu3+ concentration of 1at.% exhibit red luminescence due to intra-4f transitions of Eu3+ ions and blue luminescence due to bound excitons of GaN host crystals at 20K. In microscopic PL imaging spectroscopy experiments, the intensities of the PL due to the Eu3+ ions and due to the bound excitons are sensitive to the monitored position. The PL mechanisms of the GaN:Eu3+ epitaxial films are discussed. |
doi_str_mv | 10.1016/j.mseb.2007.07.075 |
format | article |
fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_31891578</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>31891578</sourcerecordid><originalsourceid>FETCH-LOGICAL-p101t-a1a4f18f9a94819a5f0bb54d1966882961d7481f18cc62885e4d2bf1950dbac83</originalsourceid><addsrcrecordid>eNpVT8FKxDAUzEHBdfUHPOXkrTUvbdrEmyzrKix6UM9LmrxiljSNmxTcv7e4XoSBgZlhmCHkBlgJDJq7fTkk7ErOWFv-QpyRBVMcCgGsvSCXKe0ZY8A5X5Dw5jIWFiMGiyHT9UT9NLiAyWAwSF2gG_1yP8sYXdbfTnvaOz8kmvJkHVraHengzGFMZozO0Pg55vFfRYpo8sk_XpHzXvuE13-8JB-P6_fVU7F93TyvHrZFnC_kQoOue5C90qqWoLToWdeJ2oJqGim5asC2szFHjGm4lAJry7selGC200ZWS3J76o2H8WvClHeDm-d4rwOOU9pVIBWIVlY_C6dd4w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>31891578</pqid></control><display><type>article</type><title>Site-dependent Eu luminescence in GaN:Eu epitaxial films studied by microscopic photoluminescence spectroscopy</title><source>ScienceDirect Journals</source><creator>Ishizumi, A ; Sawahata, J ; Akimoto, K ; Kanemitsu, Y</creator><creatorcontrib>Ishizumi, A ; Sawahata, J ; Akimoto, K ; Kanemitsu, Y</creatorcontrib><description>We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films. The GaN:Eu3+ epitaxial films with a Eu3+ concentration of 1at.% exhibit red luminescence due to intra-4f transitions of Eu3+ ions and blue luminescence due to bound excitons of GaN host crystals at 20K. In microscopic PL imaging spectroscopy experiments, the intensities of the PL due to the Eu3+ ions and due to the bound excitons are sensitive to the monitored position. The PL mechanisms of the GaN:Eu3+ epitaxial films are discussed.</description><identifier>ISSN: 0921-5107</identifier><identifier>DOI: 10.1016/j.mseb.2007.07.075</identifier><language>eng</language><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2008-05, Vol.146 (1-3), p.186-188</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ishizumi, A</creatorcontrib><creatorcontrib>Sawahata, J</creatorcontrib><creatorcontrib>Akimoto, K</creatorcontrib><creatorcontrib>Kanemitsu, Y</creatorcontrib><title>Site-dependent Eu luminescence in GaN:Eu epitaxial films studied by microscopic photoluminescence spectroscopy</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films. The GaN:Eu3+ epitaxial films with a Eu3+ concentration of 1at.% exhibit red luminescence due to intra-4f transitions of Eu3+ ions and blue luminescence due to bound excitons of GaN host crystals at 20K. In microscopic PL imaging spectroscopy experiments, the intensities of the PL due to the Eu3+ ions and due to the bound excitons are sensitive to the monitored position. The PL mechanisms of the GaN:Eu3+ epitaxial films are discussed.</description><issn>0921-5107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNpVT8FKxDAUzEHBdfUHPOXkrTUvbdrEmyzrKix6UM9LmrxiljSNmxTcv7e4XoSBgZlhmCHkBlgJDJq7fTkk7ErOWFv-QpyRBVMcCgGsvSCXKe0ZY8A5X5Dw5jIWFiMGiyHT9UT9NLiAyWAwSF2gG_1yP8sYXdbfTnvaOz8kmvJkHVraHengzGFMZozO0Pg55vFfRYpo8sk_XpHzXvuE13-8JB-P6_fVU7F93TyvHrZFnC_kQoOue5C90qqWoLToWdeJ2oJqGim5asC2szFHjGm4lAJry7selGC200ZWS3J76o2H8WvClHeDm-d4rwOOU9pVIBWIVlY_C6dd4w</recordid><startdate>20080515</startdate><enddate>20080515</enddate><creator>Ishizumi, A</creator><creator>Sawahata, J</creator><creator>Akimoto, K</creator><creator>Kanemitsu, Y</creator><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080515</creationdate><title>Site-dependent Eu luminescence in GaN:Eu epitaxial films studied by microscopic photoluminescence spectroscopy</title><author>Ishizumi, A ; Sawahata, J ; Akimoto, K ; Kanemitsu, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p101t-a1a4f18f9a94819a5f0bb54d1966882961d7481f18cc62885e4d2bf1950dbac83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ishizumi, A</creatorcontrib><creatorcontrib>Sawahata, J</creatorcontrib><creatorcontrib>Akimoto, K</creatorcontrib><creatorcontrib>Kanemitsu, Y</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ishizumi, A</au><au>Sawahata, J</au><au>Akimoto, K</au><au>Kanemitsu, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Site-dependent Eu luminescence in GaN:Eu epitaxial films studied by microscopic photoluminescence spectroscopy</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2008-05-15</date><risdate>2008</risdate><volume>146</volume><issue>1-3</issue><spage>186</spage><epage>188</epage><pages>186-188</pages><issn>0921-5107</issn><abstract>We have studied photoluminescence (PL) properties of Eu3+-doped GaN (GaN:Eu3+) epitaxial films. The GaN:Eu3+ epitaxial films with a Eu3+ concentration of 1at.% exhibit red luminescence due to intra-4f transitions of Eu3+ ions and blue luminescence due to bound excitons of GaN host crystals at 20K. In microscopic PL imaging spectroscopy experiments, the intensities of the PL due to the Eu3+ ions and due to the bound excitons are sensitive to the monitored position. The PL mechanisms of the GaN:Eu3+ epitaxial films are discussed.</abstract><doi>10.1016/j.mseb.2007.07.075</doi><tpages>3</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0921-5107 |
ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2008-05, Vol.146 (1-3), p.186-188 |
issn | 0921-5107 |
language | eng |
recordid | cdi_proquest_miscellaneous_31891578 |
source | ScienceDirect Journals |
title | Site-dependent Eu luminescence in GaN:Eu epitaxial films studied by microscopic photoluminescence spectroscopy |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T06%3A25%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Site-dependent%20Eu%20luminescence%20in%20GaN:Eu%20epitaxial%20films%20studied%20by%20microscopic%20photoluminescence%20spectroscopy&rft.jtitle=Materials%20science%20&%20engineering.%20B,%20Solid-state%20materials%20for%20advanced%20technology&rft.au=Ishizumi,%20A&rft.date=2008-05-15&rft.volume=146&rft.issue=1-3&rft.spage=186&rft.epage=188&rft.pages=186-188&rft.issn=0921-5107&rft_id=info:doi/10.1016/j.mseb.2007.07.075&rft_dat=%3Cproquest%3E31891578%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p101t-a1a4f18f9a94819a5f0bb54d1966882961d7481f18cc62885e4d2bf1950dbac83%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=31891578&rft_id=info:pmid/&rfr_iscdi=true |