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Thermal effects in photoemission from Bi(1 1 1) films on Si(1 1 1)-(7 × 7)
An angle-resolved photoemission study of epitaxied Bi(1 1 1) film on Si(1 1 1)-(7 × 7) surface has been carried out at a temperature from 10 K to 210 K. The results show that there exists strong temperature dependence in the valence band of Bi(1 1 1) film. The variations in the spectral intensity an...
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| Published in: | Surface science 2008, Vol.602 (1), p.102-106 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c361t-c8b47e3edd2558cd66349022e19f85f12023d1d4bcaed90bab4e30e540f0ac43 |
| container_end_page | 106 |
| container_issue | 1 |
| container_start_page | 102 |
| container_title | Surface science |
| container_volume | 602 |
| creator | Han, Tie-Zhu Jia, Jin-Feng Shen, Quan-Tong Dong, Guo-Cai Xue, Qi-Kun |
| description | An angle-resolved photoemission study of epitaxied Bi(1
1
1) film on Si(1
1
1)-(7
×
7) surface has been carried out at a temperature from 10
K to 210
K. The results show that there exists strong temperature dependence in the valence band of Bi(1
1
1) film. The variations in the spectral intensity and shape indicate the importance of phonon-assisted indirect transition in the photoemission process. The thermal sensitivity coefficients and effective Debye temperatures for main spectral peaks are determined from the experimental data. |
| doi_str_mv | 10.1016/j.susc.2007.09.056 |
| format | article |
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1
1) film on Si(1
1
1)-(7
×
7) surface has been carried out at a temperature from 10
K to 210
K. The results show that there exists strong temperature dependence in the valence band of Bi(1
1
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1
1) film on Si(1
1
1)-(7
×
7) surface has been carried out at a temperature from 10
K to 210
K. The results show that there exists strong temperature dependence in the valence band of Bi(1
1
1) film. The variations in the spectral intensity and shape indicate the importance of phonon-assisted indirect transition in the photoemission process. The thermal sensitivity coefficients and effective Debye temperatures for main spectral peaks are determined from the experimental data.</description><subject>Bismuth</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Indirect transition</subject><subject>Photoemission</subject><subject>Physics</subject><subject>Temperature dependence</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKAzEUhoMoWKsv4CobxS5mPEnmFnCjxRsWXNh9SDMnNGUuNZkKPokP5IuZ0urSZBH4-c4lHyHnDFIGrLhepWETTMoByhRkCnlxQEasKmXCy7w6JCMAIZMCeHVMTkJYQTyZzEfkZb5E3-qGorVohkBdR9fLfuixdSG4vqPW9y29c1eMxjuh1jVtoDF_-42Sq5J-f9FyckqOrG4Cnu3fMZk_3M-nT8ns9fF5ejtLjCjYkJhqkZUosK55nlemLgqRSeAcmbRVbhkHLmpWZwujsZaw0IsMBWCegQVtMjEml7u2a9-_bzAMKq5qsGl0h_0mKMEksIqxCPIdaHwfgker1t612n8qBmqrTa3UVpvaalMgVdQWiy723XUwurFed8aFv8qIAs-FjNzNjsP40w-HXgXjsDNYOx9Fqrp3_435AUJ-f8w</recordid><startdate>2008</startdate><enddate>2008</enddate><creator>Han, Tie-Zhu</creator><creator>Jia, Jin-Feng</creator><creator>Shen, Quan-Tong</creator><creator>Dong, Guo-Cai</creator><creator>Xue, Qi-Kun</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2008</creationdate><title>Thermal effects in photoemission from Bi(1 1 1) films on Si(1 1 1)-(7 × 7)</title><author>Han, Tie-Zhu ; Jia, Jin-Feng ; Shen, Quan-Tong ; Dong, Guo-Cai ; Xue, Qi-Kun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-c8b47e3edd2558cd66349022e19f85f12023d1d4bcaed90bab4e30e540f0ac43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Bismuth</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Indirect transition</topic><topic>Photoemission</topic><topic>Physics</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han, Tie-Zhu</creatorcontrib><creatorcontrib>Jia, Jin-Feng</creatorcontrib><creatorcontrib>Shen, Quan-Tong</creatorcontrib><creatorcontrib>Dong, Guo-Cai</creatorcontrib><creatorcontrib>Xue, Qi-Kun</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Han, Tie-Zhu</au><au>Jia, Jin-Feng</au><au>Shen, Quan-Tong</au><au>Dong, Guo-Cai</au><au>Xue, Qi-Kun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal effects in photoemission from Bi(1 1 1) films on Si(1 1 1)-(7 × 7)</atitle><jtitle>Surface science</jtitle><date>2008</date><risdate>2008</risdate><volume>602</volume><issue>1</issue><spage>102</spage><epage>106</epage><pages>102-106</pages><issn>0039-6028</issn><eissn>1879-2758</eissn><coden>SUSCAS</coden><abstract>An angle-resolved photoemission study of epitaxied Bi(1
1
1) film on Si(1
1
1)-(7
×
7) surface has been carried out at a temperature from 10
K to 210
K. The results show that there exists strong temperature dependence in the valence band of Bi(1
1
1) film. The variations in the spectral intensity and shape indicate the importance of phonon-assisted indirect transition in the photoemission process. The thermal sensitivity coefficients and effective Debye temperatures for main spectral peaks are determined from the experimental data.</abstract><cop>Lausanne</cop><cop>Amsterdam</cop><cop>New York, NY</cop><pub>Elsevier B.V</pub><doi>10.1016/j.susc.2007.09.056</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0039-6028 |
| ispartof | Surface science, 2008, Vol.602 (1), p.102-106 |
| issn | 0039-6028 1879-2758 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_31901811 |
| source | ScienceDirect Journals |
| subjects | Bismuth Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Indirect transition Photoemission Physics Temperature dependence |
| title | Thermal effects in photoemission from Bi(1 1 1) films on Si(1 1 1)-(7 × 7) |
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