Growth of a-plane ZnO thin films on LaAlO3(100) substrate by metal-organic chemical vapor deposition

ZnO(112_0) thin films were successfully grown on LaAlO3 (lanthanum aluminate) (100) substrate by atmospheric pressure metal-organic chemical vapor deposition. X-ray diffraction, atomic force microscopy, and scanning electron microscopy showed that ZnO films formed at 450 deg C were composed of almos...

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Bibliographic Details
Published in:Journal of crystal growth 2008-02, Vol.310 (4), p.777-782
Main Authors: SHENG TIAN, LIANG, Mei-Hui, HO, Yen-Teng, LIU, Yuan-An, LI CHANG
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Theory and models of film growth
Thin film structure and morphology
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Summary:ZnO(112_0) thin films were successfully grown on LaAlO3 (lanthanum aluminate) (100) substrate by atmospheric pressure metal-organic chemical vapor deposition. X-ray diffraction, atomic force microscopy, and scanning electron microscopy showed that ZnO films formed at 450 deg C were composed of almost all (112_0) oriented grains while (0002) oriented ZnO grains started to appear at temperature above 550 deg C. The a-plane ZnO films consisted of two types of domains with their c-axis perpendicular to each other due to LaAlO3(100) symmetry with low lattice mismatch along 110.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2007.11.073