Aluminum Oxide Doped with Erbium, Titanium and Chromium for Active Integrated Optical Applications

Amorphous thin films with very low attenuation are grown by MO-PECVD. The modifications due to the annealing condition are subject of investigations. Aluminum oxide waveguides are doped with erbium for applications in telecommunication to develop an integrated optical amplifier. AlsoAl 2O 3 doped wi...

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Bibliographic Details
Published in:International journal of electronics and communications 2001, Vol.55 (5), p.342-348
Main Authors: Mahnke, M., Wiechmann, S., Heider, H.J., Blume, O., Müller, J.
Format: Article
Language:English
Subjects:
Aluminum oxide
Chromium
Doping
Erbium
Integrated optics
MO-PECVD
Titanium
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Summary:Amorphous thin films with very low attenuation are grown by MO-PECVD. The modifications due to the annealing condition are subject of investigations. Aluminum oxide waveguides are doped with erbium for applications in telecommunication to develop an integrated optical amplifier. AlsoAl 2O 3 doped with transition elements to develop tunable solid state lasers for spectroscopic measurements is of interest. Lasers with broadest fluorescence bands are Ti:Sapphire lasers or chromium doped specific crystals or glasses. In this paper the suitability of titanium and chromium doped aluminum oxide material as laser material is examined. Titanium and chromium doped waveguides have been annealed. Their fluorescence and lifetime measurements are presented.
ISSN:1434-8411
1618-0399
DOI:10.1078/1434-8411-00051