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Ion-plasma protective coatings of CdTe surface for X- and gamma-ray detectors
Comparative study of I–V characteristics of “metal-semiconductor-metal” structures without coatings and with protective coatings is presented. Regimes for radio frequency deposition of dielectric coatings on the surface of pixeled Schottky junction based on Cl-doped CdTe single crystals with high re...
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Published in: | Surface & coatings technology 2008-02, Vol.202 (11), p.2509-2512 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Comparative study of I–V characteristics of “metal-semiconductor-metal” structures without coatings and with protective coatings is presented. Regimes for radio frequency deposition of dielectric coatings on the surface of pixeled Schottky junction based on Cl-doped CdTe single crystals with high resistivity (10
7–10
10) Ω·cm were determined. In particular, the films with composition of (TeO
2)
x
–(SiO
2)
1
−
x
have demonstrated high isolation properties. Possible applications of new CdTe pixeled detectors with the studied protective coatings for high resolution spectrometry in X- and gamma-ray sensor devices are discussed. |
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ISSN: | 0257-8972 1879-3347 |
DOI: | 10.1016/j.surfcoat.2007.09.049 |