Silver-assisted electroless etching mechanism of silicon

The morphology of metal‐assisted electroless etched n‐type silicon in HF–oxidizing agent–H2O etching system as a function of oxidizing type and etching time was studied. Three types of oxidizing agent were investigated: Na2S2O8, K2Cr2O7 and KMnO4. The layers formed on silicon were investigated by sc...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2008-02, Vol.205 (2), p.225-230
Main Authors: Douani, R., Si-Larbi, K., Hadjersi, T., Megouda, N., Manseri, A.
Format: Article
Language:English
Subjects:
68.37.Hk
81.05.Cy
81.05.Rm
81.65.Cf
82.80.Ms
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Physics
Surface treatments
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Summary:The morphology of metal‐assisted electroless etched n‐type silicon in HF–oxidizing agent–H2O etching system as a function of oxidizing type and etching time was studied. Three types of oxidizing agent were investigated: Na2S2O8, K2Cr2O7 and KMnO4. The layers formed on silicon were investigated by scanning electron microscopy and energy‐dispersive X‐ray analysis. It is shown that the morphology of the etched layers depends strongly on the type of oxidizing agent. The secondary ion mass spectra of the etched layers reveal that the deposited silver diffuses into the etched layers during etching. Finally, a discussion on the dissolution mechanism of silicon by silver‐assisted electroless etching is presented. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200723159